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TLV2262IPWG4

Texas Instruments

TLV2262IPWG4 by Texas Instruments

TLV2262IPWG4 by Texas Instruments is a dual operational amplifier with low bias current (0.0008 uA) and high common mode rejection ratio (75 dB). It operates at a supply voltage of +-1.35/+-4/2.7/8 V, making it suitable for automotive applications requiring micropower amplification in a small outline package. With a unity gain bandwidth of 670 kHz, this CMOS technology-based op amp offers precise signal processing capabilities for temperature-sensitive environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 4,021 parts In-Stock

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Digiode

USA . 1,002 parts In-Stock

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Nova Conductors

Japan . 100 parts In-Stock

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100

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Distributors (Availability)

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Ampacity Inc.

Singapore . 812 parts In-Stock

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$4.410

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$4.410

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Parana Technologies

USA . 2,261 parts In-Stock

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$4.860

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$5.385

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DigiPath Technology Company

USA . 588 parts In-Stock

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$5.352

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ChromeModa Solutions

Germany . 6,812 parts In-Stock

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$5.461

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$4.478

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IDEA Electronic Components Group

UK . 2,156 parts In-Stock

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$5.461

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$4.915

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One Stop Electronics

USA . 938 parts In-Stock

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$7.410

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938

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AZTECH Wire

Italy . 780 parts In-Stock

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Corphita

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Microchip USA

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Aranea Global

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Argo Parts USA

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Continental Prestige Electronics

USA . 1,541 parts In-Stock

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Overview

Experience the unmatched performance and reliability of the TLV2262IPWG4 by Texas Instruments, a leading manufacturer in the industry of Operational Amplifiers. Known for its exceptional quality and precision, this Op Amp is perfect for a wide range of applications. From automotive to industrial settings, this versatile component offers customers unparalleled value with its low-bias design, micropower technology, and high common mode rejection ratio. Trust in Texas Instruments to deliver cutting-edge solutions that exceed expectations. Elevate your projects with the TLV2262IPWG4 today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and cost-effective.

Maximum Input Offset Voltage: 3000 uV

The low input offset voltage ensures accurate and precise signal processing.

Surface Mount: YES

Surface mount feature allows for easy integration onto circuit boards, saving space and simplifying assembly.

Nominal Common Mode Reject Ratio: 75 dB

High common mode rejection ratio helps in rejecting noise and interference for cleaner output signals.

Nominal Supply Voltage / Vsup (V): 3

Operates at a nominal supply voltage of 3V, making it suitable for low power applications.

Minimum Voltage Gain: 30000

High voltage gain ensures small input signals can be amplified effectively, improving signal clarity.

Technology: CMOS

Utilizes CMOS technology for low power consumption and high noise immunity.

Architecture: VOLTAGE-FEEDBACK

Voltage-feedback architecture provides stable and reliable operation for various circuit designs.

Technical Specifications

Operational Amplifiers (Op Amps) TLV2262IPWG4 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

CMOS

Power Supply:

±1.35/±4/2.7/8 V

Total Functions:

2

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Micropower:

Yes

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

670 kHz

Nominal Common Mode Rejection Ratio (CMRR ):

75 dB

Minimum Common Mode Rejection Ratio (CMRR ):

70 dB

Input Offset Voltage Limit:

3000 uV

Minimum Voltage Gain:

30000

Minimum Slew Rate:

0.3 V/us

Nominal Slew Rate:

0.55 V/us

Maximum Input Offset Current (IIO):

60 pA

Peak Bias Current:

800 pA

Maximum Bias Current (IIB) @25 °C:

60 pA

Operational Characteristics

Nominal Supply Voltage:

3 V

Maximum Supply Voltage:

16 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Reflow Peak Time Limit:

30 s

Maximum Supply Current:

500 μA

Physical Characteristics

Length:

0.173 in (4.4 mm)

Width:

0.118 in (3 mm)

Maximum Seated Height:

0.047 in (1.2 mm)

Total Terminals:

8

Terminal Pitch:

0.026 in (0.65 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tube

Package Code:

Package Shape:

Package Style:

Small Outline, Thin Profile, Shrink Pitch

Package Equivalence Code:

DIP8,.3

Trade Compliance

TLV2262IPWG4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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