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TLV2211IDBVTG4

Texas Instruments

TLV2211IDBVTG4 by Texas Instruments

TLV2211IDBVTG4 by Texas Instruments is a micropower operational amplifier with low-bias current and CMOS technology. It offers a max input offset voltage of 3000 uV, nominal unity gain bandwidth of 56 kHz, and operates in industrial temperature grades. Ideal for applications requiring precise signal amplification in compact designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Chip Stock

USA . 31,770 parts In-Stock

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Vyrian

USA . 2,018 parts In-Stock

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Digiode

USA . 1,276 parts In-Stock

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Nova Conductors

Japan . 450 parts In-Stock

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450

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Ampacity Inc.

Singapore . 466 parts In-Stock

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$0.410

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$0.410

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One Stop Electronics

USA . 661 parts In-Stock

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$1.410

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Corohmni

South Africa . 143 parts In-Stock

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$3.537

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AZTECH Wire

Italy . 861 parts In-Stock

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Parana Technologies

USA . 1,792 parts In-Stock

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$6.526

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$606.072

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$5.874

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DigiPath Technology Company

USA . 1,260 parts In-Stock

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$7.186

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IDEA Electronic Components Group

UK . 686 parts In-Stock

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$7.333

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$6.600

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ChromeModa Solutions

Germany . 14 parts In-Stock

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$7.333

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Argo Parts USA

USA . 4,584 parts In-Stock

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Continental Prestige Electronics

USA . 4,576 parts In-Stock

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Microchip USA

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Aranea Global

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Corphita

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Perfect Parts

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Overview

Discover the innovative TLV2211IDBVTG4 by Texas Instruments, a cutting-edge operational amplifier designed for a range of applications. With a commitment to quality and precision, Texas Instruments delivers a reliable product that exceeds expectations. This versatile device offers customers unparalleled value with its low bias current, micropower capabilities, and exceptional performance in industrial settings. Elevate your projects with the TLV2211IDBVTG4 and experience the difference that superior technology can make.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and reliability for long-term use.

Maximum Input Offset Voltage: 3000 uV

Low input offset voltage ensures accuracy in signal processing applications.

Nominal Common Mode Reject Ratio: 83 dB

High common mode rejection ratio helps in eliminating noise and interference.

Minimum Slew Rate: 0.005 V/us

Fast slew rate allows for quick response to input signal changes.

Technology: CMOS

CMOS technology provides low power consumption and high input impedance.

Amplifier Type: OPERATIONAL AMPLIFIER

Operational amplifiers are widely used in various applications due to their versatility and high performance.

Technical Specifications

Operational Amplifiers (Op Amps) TLV2211IDBVTG4 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

CMOS

Power Supply:

3/5 V

Total Functions:

1

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Micropower:

Yes

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

56 kHz

Nominal Common Mode Rejection Ratio (CMRR ):

83 dB

Minimum Common Mode Rejection Ratio (CMRR ):

70 dB

Input Offset Voltage Limit:

3000 uV

Minimum Voltage Gain:

1000

Minimum Slew Rate:

0.005 V/us

Nominal Slew Rate:

0.025 V/us

Maximum Input Offset Current (IIO):

60 pA

Peak Bias Current:

150 pA

Maximum Bias Current (IIB) @25 °C:

60 pA

Operational Characteristics

Nominal Supply Voltage:

3 V

Maximum Supply Voltage:

12 V

Maximum Negative Supply Voltage:

0 V

Minimum Negative Supply Voltage:

0 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

85 °C (185 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Maximum Supply Current:

25 μA

Physical Characteristics

Length:

0.114 in (2.9 mm)

Width:

0.065 in (1.65 mm)

Maximum Seated Height:

0.057 in (1.45 mm)

Total Terminals:

5

Terminal Pitch:

0.037 in (0.95 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel/Palladium/Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

Package Shape:

Package Style:

Small Outline, Shrink Pitch

Package Equivalence Code:

TSOP5/6,.11,37

Trade Compliance

TLV2211IDBVTG4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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