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TLC7701QPWRG4

Texas Instruments

TLC7701QPWRG4 by Texas Instruments

TLC7701QPWRG4 by Texas Instruments is a Power Management IC with Vsup range of 2-6V, operating temp -40 to 125°C. It has 8 terminals in a small outline package suitable for automotive applications. Features include low supply current (0.016mA), dual terminal position, and CMOS technology.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 6,256 parts In-Stock

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Digiode

USA . 4,557 parts In-Stock

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Nova Conductors

Japan . 500 parts In-Stock

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500

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One Stop Electronics

USA . 643 parts In-Stock

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$0.500

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643

$0.500

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Ampacity Inc.

Singapore . 390 parts In-Stock

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$1.500

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390

$1.500

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AZTECH Wire

Italy . 701 parts In-Stock

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$7.502

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Parana Technologies

USA . 1,924 parts In-Stock

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$22.049

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$22.612

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$22.612

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DigiPath Technology Company

USA . 245 parts In-Stock

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$24.279

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$22.336

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$24.279

$22.336

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IDEA Electronic Components Group

UK . 1,810 parts In-Stock

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$24.774

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$23.535

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$22.297

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$22.297

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ChromeModa Solutions

Germany . 1,599 parts In-Stock

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$24.774

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$20.315

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Component Stockers USA

USA . 565 parts In-Stock

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$99.990

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Authorized Procurement Solutions

USA . 2,500 parts In-Stock

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Microchip USA

USA . 2,096 parts In-Stock

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Corphita

USA . 752 parts In-Stock

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Bastille Electronics

Australia . 100 parts In-Stock

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Overview

Elevate your power management game with the TLC7701QPWRG4 by Texas Instruments. Known for their top-notch quality and innovation, Texas Instruments delivers cutting-edge solutions for a wide range of applications. This small outline, thin profile IC offers reliable performance and precise power supply support, making it an essential component for automotive and industrial environments. Trust in Texas Instruments to provide you with the value and reliability you need to keep your systems running smoothly. Choose the TLC7701QPWRG4 and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and protection for the components inside, ensuring a longer lifespan for the product.

Surface Mount: YES

Being surface mountable makes it easier to integrate this power management IC into a variety of electronic devices, saving space and improving assembly efficiency.

Nominal Supply Voltage (Vsup): 2.7 V

The 2.7V nominal supply voltage is compatible with a wide range of applications, offering flexibility and versatility in design.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature of 125°C, this power management IC can withstand harsh environmental conditions, making it suitable for automotive and industrial applications.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the power management IC energy-efficient and reliable.

Technical Specifications

Power Management ICs TLC7701QPWRG4 attributes and parameters. Explore more Power Management ICs devices from Texas Instruments

Specs

Additional Features:

POWER-ON RESET GENERATOR

Adjustable Threshold:

NO

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Length:

4.4 mm

Moisture Sensitivity Level (MSL):

1

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

2/6

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Sub-Category:

Power Management Circuits

Maximum Supply Current (Isup):

.016 mA

Maximum Supply Voltage (Vsup):

6 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage (Vsup):

2.7 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

GULL WING

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Nominal Threshold Voltage (V):

+1.1V

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width (mm):

3 mm

Trade Compliance

TLC7701QPWRG4 Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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