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TLC555MJGB

Texas Instruments

TLC555MJGB by Texas Instruments

TLC555MJGB by Texas Instruments is an Analog Waveform Generation IC with 8 terminals. It operates at a supply voltage range of 2-15V and has a max output frequency of 1.2 GHz. Ideal for military-grade applications due to its CMOS technology, it can withstand temperatures from -55 to 125°C.

Median Price

$10.420

Lifecycle Status

Suppliers In-Stock

17

In-Stock Inventory

1k+

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Chip1Stop

Japan . 5 parts In-Stock

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$8.728

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Arrow

USA . 46 parts In-Stock

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$11.223

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$10.848

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Nova Conductors

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Digiode

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Vyrian

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Chip Stock

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Beltway Electronics Company

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ECAB

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ACDS - Activité Composants Distribution Service

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Holdelec - ElecDif-Pro

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Digital Electronic Gebert Verwaltungs UG

Germany . 14 parts In-Stock

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Resion

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EPE Components Inc.

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Bristol Electronics

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Eagle Technology Solutions

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LittleDiode

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Electro Mavin

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Distributors (Availability)

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Aranea Global

USA . 50 parts In-Stock

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$6.045

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$5.803

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$6.045

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Corohmni

South Africa . 908 parts In-Stock

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AZTECH Wire

Italy . 506 parts In-Stock

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Ampacity Inc.

Singapore . 103 parts In-Stock

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Semicontronic

India . 43 parts In-Stock

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$7.215

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Corphita

USA . 2,823 parts In-Stock

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Parana Technologies

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DigiPath Technology Company

USA . 92 parts In-Stock

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ChromeModa Solutions

Germany . 1,535 parts In-Stock

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IDEA Electronic Components Group

UK . 1,300 parts In-Stock

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Continental Prestige Electronics

USA . 3,980 parts In-Stock

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Argo Parts USA

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Authorized Procurement Solutions

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Microchip USA

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Kepictronics

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Perfect Parts

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Assy Fe

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Overview

Discover the power of precision with the TLC555MJGB by Texas Instruments. As a leader in analog waveform generation, Texas Instruments delivers unparalleled quality and reliability in every product. Ideal for applications requiring high-frequency output and low power consumption, this ceramic, glass-sealed package offers customers a versatile solution with a wide operating temperature range. With Texas Instruments' commitment to innovation, the TLC555MJGB provides exceptional value and performance, making it the perfect choice for your next project. Elevate your designs with Texas Instruments and experience the difference today.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

This material provides excellent durability and resistance to harsh environmental conditions, making the product reliable and long-lasting.

Nominal Supply Voltage (Vsup): 5 V

Operating at a standard voltage level of 5 V makes it compatible with most electronic systems and ensures stable performance.

Maximum Output Frequency: 1.2 GHz

High output frequency capability allows for generating complex waveforms with precision and speed, ideal for various applications.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, enhancing the efficiency and reliability of the product.

Maximum Operating Temperature: 125 °C

With a high operating temperature range, the product can withstand extended use in demanding conditions without compromising performance.

Technical Specifications

Analog Waveform Generation TLC555MJGB attributes and parameters. Explore more Analog Waveform Generation devices from Texas Instruments

Specs

Additional Features:

IT CAN ALSO OPERATE AT 15 V NOMINAL SUPPLY

Other IC type:

JESD-30 Code:

R-GDIP-T8

JESD-609 Code:

e0

Length:

9.58 mm

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Frequency:

1.2 GHz

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

DIP

Package Equivalence Code:

DIP8,.3

Package Shape:

Package Style (Meter):

IN-LINE

Power Supplies (V):

5

Qualification:

Not Qualified

Screening Level:

38535Q/M;38534H;883B

Maximum Seated Height:

5.08 mm

Sub-Category:

Analog Waveform Generation Functions

Maximum Supply Current (Isup):

.7 mA

Maximum Supply Voltage (Vsup):

15 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage (Vsup):

5 V

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width (mm):

7.62 mm

Trade Compliance

TLC555MJGB Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

NSN

5962-01-328-8710, 5962013288710, 5962-01-287-9499, 5962012879499

NIIN

013288710, 012879499

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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