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TLC4502MJGB

Texas Instruments

TLC4502MJGB by Texas Instruments

TLC4502MJGB by Texas Instruments is a dual operational amplifier with low-offset and low-bias features. It offers a max input offset voltage of 100 uV, nominal unity gain bandwidth of 4700 kHz, and min slew rate of 1 V/us. Ideal for military applications requiring precise signal amplification in harsh environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,475 parts In-Stock

1+ parts

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8,475

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Digiode

USA . 3,604 parts In-Stock

1+ parts

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-

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3,604

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,828 parts In-Stock

1+ parts

$3.467

100+ parts

-

1k+ parts

$3.991

10k+ parts

-

1,828

$3.467

-

$3.991

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ChromeModa Solutions

Germany . 934 parts In-Stock

1+ parts

$3.895

100+ parts

$3.194

1k+ parts

-

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934

$3.895

$3.194

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IDEA Electronic Components Group

UK . 130 parts In-Stock

1+ parts

$3.895

100+ parts

-

1k+ parts

$3.506

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130

$3.895

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$3.506

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One Stop Electronics

USA . 691 parts In-Stock

1+ parts

$7.410

100+ parts

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691

$7.410

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AZTECH Wire

Italy . 763 parts In-Stock

1+ parts

$8.831

100+ parts

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763

$8.831

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Microchip USA

USA . 2,096 parts In-Stock

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2,096

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Corphita

USA . 1,396 parts In-Stock

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1,396

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DigiPath Technology Company

USA . 581 parts In-Stock

1+ parts

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$3.512

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581

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$3.512

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Overview

Enhance your electronic designs with the TLC4502MJGB by Texas Instruments, a high-quality operational amplifier perfect for a wide range of applications. Designed with precision and reliability in mind, this product offers unmatched performance and value to customers. Whether you're working on audio equipment, sensor interfaces, or control systems, the TLC4502MJGB delivers exceptional results with minimal power consumption. Trust in Texas Instruments for cutting-edge technology that meets all your needs.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

Provides durability and protection for the internal components, ensuring long-term reliability.

Nominal Common Mode Reject Ratio: 100 dB

High common mode rejection ratio helps in minimizing noise interference from the input signals, leading to accurate output.

Minimum Slew Rate: 1 V/us

Fast slew rate allows for quick response to input signals, making it suitable for applications with fast-changing signals.

Minimum Operating Temperature: -55 °C

Wide operating temperature range enables the op amp to function in extreme temperature conditions.

Nominal Unity Gain Bandwidth: 4700 kHz

Higher unity gain bandwidth ensures that the op amp can handle high-frequency signals effectively.

Technology: CMOS

CMOS technology offers low power consumption and high input impedance, making the op amp suitable for battery-operated devices.

Technical Specifications

Operational Amplifiers (Op Amps) TLC4502MJGB attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Chooper Stab

Technology:

CMOS

Power Supply:

5 V

Total Functions:

2

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

Yes

Micropower:

No

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

4.7 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

100 dB

Minimum Common Mode Rejection Ratio (CMRR ):

90 dB

Input Offset Voltage Limit:

100 uV

Minimum Voltage Gain:

200000

Minimum Slew Rate:

1 V/us

Nominal Slew Rate:

2.5 V/us

Maximum Input Offset Current (IIO):

60 pA

Peak Bias Current:

60 pA

Maximum Bias Current (IIB) @25 °C:

60 pA

Operational Characteristics

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

7 V

Maximum Negative Supply Voltage:

0 V

Minimum Negative Supply Voltage:

0 V

Lowest Operating Temperature:

-55 °C (-67 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Maximum Supply Current:

3 mA

Physical Characteristics

Length:

0.377 in (9.58 mm)

Width:

0.3 in (7.62 mm)

Maximum Seated Height:

0.2 in (5.08 mm)

Total Terminals:

8

Terminal Pitch:

0.1 in (2.54 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Tin Lead

Package Body Material:

Ceramic, Glass-Sealed

Surface Mount:

No

Manufacturing and Reliability

Temperature Grade:

Qualified:

No

Screening Level:

38535Q/M;38534H;883B

Standards

JESD-30 Code:

R-GDIP-T8

JESD-609 Code:

e0

Packaging and Shipping

Packing Method:

Tube

Package Code:

DIP

Package Shape:

Package Style:

In Line

Package Equivalence Code:

DIP8,.3

Trade Compliance

TLC4502MJGB Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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