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TLC4501CDRG4

Texas Instruments

TLC4501CDRG4 by Texas Instruments

TLC4501CDRG4 by Texas Instruments is an Op Amp with 80uV Max Input Offset Voltage, 100dB CMRR, and 4700kHz Unity Gain Bandwidth. Ideal for precision applications requiring low bias current and offset voltage in a compact SMD package.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 7,896 parts In-Stock

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Digiode

USA . 593 parts In-Stock

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593

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Distributors (Availability)

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Parana Technologies

USA . 792 parts In-Stock

1+ parts

$5.289

100+ parts

-

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$5.917

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792

$5.289

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$5.917

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DigiPath Technology Company

USA . 346 parts In-Stock

1+ parts

$5.824

100+ parts

$5.358

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346

$5.824

$5.358

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IDEA Electronic Components Group

UK . 1,938 parts In-Stock

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$5.943

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$5.349

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1,938

$5.943

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$5.349

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ChromeModa Solutions

Germany . 1,170 parts In-Stock

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$5.943

100+ parts

$4.873

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1,170

$5.943

$4.873

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AZTECH Wire

Italy . 199 parts In-Stock

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$6.061

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$6.061

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One Stop Electronics

USA . 1,214 parts In-Stock

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$8.410

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$8.410

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Corphita

USA . 394 parts In-Stock

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Overview

Elevate your electronic designs with the Texas Instruments TLC4501CDRG4 operational amplifier. Manufactured by a trusted industry leader, this high-quality component offers precision and reliability for a wide range of applications. From signal conditioning to sensor amplification, this versatile op amp delivers exceptional performance and value. With ultra-low bias current and offset voltage, along with a compact package design, the TLC4501CDRG4 is the perfect choice for demanding projects where accuracy and efficiency are paramount. Trust Texas Instruments to provide you with cutting-edge solutions that exceed your expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material is durable and can withstand various environmental conditions, making this product a reliable choice for different applications.

Maximum Input Offset Voltage: 80 uV

The low input offset voltage ensures accurate signal processing and minimal error in the output, making this operational amplifier suitable for precision applications.

Maximum Average Bias Current (IIB): 0.0005 uA

The low bias current results in minimal power consumption and ensures stable operation, making this op amp efficient for low-power applications.

Nominal Common Mode Reject Ratio: 100 dB

The high common mode rejection ratio ensures that common-mode signals are effectively rejected, leading to a clean and accurate output signal.

Nominal Supply Voltage / Vsup (V): 5

The 5V nominal supply voltage makes this op amp compatible with a wide range of systems and applications that operate within this voltage range.

Frequency Compensation: YES

The frequency compensation feature ensures stable and predictable performance over a range of frequencies, making this op amp suitable for various signal processing tasks.

Technology: CMOS

The CMOS technology used in this operational amplifier results in low power consumption, high input impedance, and fast switching speeds, making it ideal for battery-powered and precision applications.

Technical Specifications

Operational Amplifiers (Op Amps) TLC4501CDRG4 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Chooper Stab

Technology:

CMOS

Power Supply:

5 V

Total Functions:

1

Sub-Category:

Operational Amplifiers

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

Yes

Performance Specifications

Nominal Unity Gain Bandwidth:

4.7 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

100 dB

Input Offset Voltage Limit:

80 uV

Minimum Voltage Gain:

200000

Nominal Slew Rate:

2.5 V/us

Peak Bias Current:

500 pA

Maximum Bias Current (IIB) @25 °C:

60 pA

Operational Characteristics

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

7 V

Maximum Negative Supply Voltage:

0 V

Minimum Negative Supply Voltage:

0 V

Lowest Operating Temperature:

0 °C (32 °F)

Maximum Operating Temperature:

70 °C (158 °F)

Maximum Supply Current:

4 mA

Physical Characteristics

Length:

0.193 in (4.9 mm)

Width:

0.154 in (3.905 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

8

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G8

Packaging and Shipping

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

SOP8,.25

Trade Compliance

TLC4501CDRG4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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