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TLC4501CDR

Texas Instruments

TLC4501CDR by Texas Instruments

TLC4501CDR by Texas Instruments is an Operational Amplifier with 80uV Max Input Offset Voltage, 100dB CMRR, and 4700kHz Unity Gain Bandwidth. Ideal for precision applications requiring low bias current and offset voltage in a compact package.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 6,313 parts In-Stock

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Digiode

USA . 168 parts In-Stock

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168

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One Stop Electronics

USA . 1,531 parts In-Stock

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$3.410

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1,531

$3.410

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Parana Technologies

USA . 1,516 parts In-Stock

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$6.100

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$6.877

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$6.100

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DigiPath Technology Company

USA . 1,203 parts In-Stock

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$6.717

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$6.717

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IDEA Electronic Components Group

UK . 1,149 parts In-Stock

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$6.854

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$6.169

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$6.854

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$6.169

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ChromeModa Solutions

Germany . 953 parts In-Stock

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$6.854

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$5.620

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953

$6.854

$5.620

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AZTECH Wire

Italy . 587 parts In-Stock

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$15.654

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587

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Kepictronics

USA . 8,000 parts In-Stock

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A-Z Elektronik GmbH

Germany . 7,228 parts In-Stock

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Corphita

USA . 1,475 parts In-Stock

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Metaverse IC Inc.

Canada . 206 parts In-Stock

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Overview

Elevate your circuit designs with the TLC4501CDR by Texas Instruments, a top-notch operational amplifier known for its exceptional performance and reliability. Crafted with precision and cutting-edge technology, this op amp offers unmatched quality and efficiency for a wide range of applications. From signal conditioning to instrumentation, this versatile component delivers superior results with minimal power consumption, making it a must-have for any electronics enthusiast or professional. Trust in Texas Instruments to provide you with the best tools for your projects, and experience the difference with the TLC4501CDR.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the operational amplifier, ensuring long-term reliability.

Maximum Input Offset Voltage: 80 uV

Low input offset voltage ensures accurate and precise signal processing.

Nominal Common Mode Reject Ratio: 100 dB

High common mode rejection ratio helps in rejecting noise and interference from the input signal.

Nominal Supply Voltage / Vsup (V): 5

Operates efficiently at a nominal supply voltage of 5V, suitable for a wide range of applications.

Frequency Compensation: YES

Allows for stable and reliable performance over a range of frequencies, making it versatile for various applications.

Minimum Voltage Gain: 200000

Provides high voltage gain, making it suitable for applications where signal amplification is required.

Technology: CMOS

Utilizes CMOS technology for low power consumption and high noise immunity, ideal for battery-powered devices and sensitive signal processing applications.

Amplifier Type: OPERATIONAL AMPLIFIER

Designed specifically for amplifying signals accurately and efficiently, making it a reliable choice for signal processing applications.

Technical Specifications

Operational Amplifiers (Op Amps) TLC4501CDR attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Chooper Stab

Technology:

CMOS

Power Supply:

5 V

Total Functions:

1

Sub-Category:

Operational Amplifiers

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

Yes

Performance Specifications

Nominal Unity Gain Bandwidth:

4.7 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

100 dB

Input Offset Voltage Limit:

80 uV

Minimum Voltage Gain:

200000

Nominal Slew Rate:

2.5 V/us

Peak Bias Current:

60 pA

Maximum Bias Current (IIB) @25 °C:

60 pA

Operational Characteristics

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

7 V

Maximum Negative Supply Voltage:

0 V

Minimum Negative Supply Voltage:

0 V

Lowest Operating Temperature:

0 °C (32 °F)

Maximum Operating Temperature:

70 °C (158 °F)

Maximum Supply Current:

4 mA

Physical Characteristics

Length:

0.193 in (4.9 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

8

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Packaging and Shipping

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

SOP8,.25

Trade Compliance

TLC4501CDR Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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