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LT1013DIDRG4

Texas Instruments

LT1013DIDRG4 by Texas Instruments

LT1013DIDRG4 by Texas Instruments is a dual operational amplifier with 1000uV max input offset voltage and 114dB nominal CMRR. Ideal for industrial applications, it operates at -40 to 105 °C with micropower consumption of 1.2mA at +/-15V supplies, featuring a unity gain bandwidth of 1MHz.

Median Price

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Lifecycle Status

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6

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1k+

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Chip Stock

USA . 17,030 parts In-Stock

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Vyrian

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Digiode

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Sea View Technologies

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Bristol Electronics

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Nova Conductors

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Corohmni

South Africa . 636 parts In-Stock

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$1.151

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Parana Technologies

USA . 1,370 parts In-Stock

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$1.790

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$2.350

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$1.790

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DigiPath Technology Company

USA . 77 parts In-Stock

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$1.971

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$1.813

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ChromeModa Solutions

Germany . 5,558 parts In-Stock

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$2.011

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$1.649

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IDEA Electronic Components Group

UK . 1,660 parts In-Stock

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$2.011

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$1.810

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Ampacity Inc.

Singapore . 277 parts In-Stock

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$2.410

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Advanced Electronics

New Zealand . 5,000 parts In-Stock

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Semicontronic

India . 1,283 parts In-Stock

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One Stop Electronics

USA . 798 parts In-Stock

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AZTECH Wire

Italy . 835 parts In-Stock

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A-Z Elektronik GmbH

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Argo Parts USA

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Corphita

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Authorized Procurement Solutions

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Continental Prestige Electronics

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Metaverse IC Inc.

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Bastille Electronics

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Overview

Unleash the power of precision with the LT1013DIDRG4 by Texas Instruments. As a leader in the industry, Texas Instruments delivers top-quality operational amplifiers that excel in a wide range of applications. This small outline amplifier offers exceptional performance with minimal bias current and maximum input offset voltage, making it ideal for industrial settings where reliability is paramount. Experience the benefits of high common mode rejection, low supply current, and micropower technology for efficient and reliable operation. Upgrade your systems with the LT1013DIDRG4 and elevate your performance to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy package material provides durability and heat resistance, making it suitable for a wide range of applications.

Maximum Input Offset Voltage: 1000 uV

Low input offset voltage ensures accuracy in signal processing and reduces errors in the output signal.

Surface Mount: YES

Surface mount design allows for easy installation on PCBs, saving space and simplifying manufacturing processes.

Nominal Common Mode Reject Ratio: 114 dB

High common mode rejection ratio ensures that common noise is effectively rejected, leading to a cleaner output signal.

Nominal Supply Voltage / Vsup (V): 15

Stable supply voltage of 15V ensures reliable operation of the operational amplifier in various applications.

Minimum Slew Rate: 0.2 V/us

Fast slew rate of 0.2 V/us allows the amplifier to respond quickly to changes in input signals, making it suitable for applications requiring fast response times.

Maximum Supply Voltage Limit: 22 V

Wide supply voltage range up to 22V increases the versatility of the operational amplifier in different voltage environments.

Maximum Operating Temperature: 105 °C

High operating temperature of 105°C allows the operational amplifier to function reliably in demanding industrial environments.

Nominal Unity Gain Bandwidth: 1000 kHz

High unity gain bandwidth of 1000 kHz ensures stable performance and accurate signal processing across a wide frequency range.

Maximum Seated Height: 1.75 mm

Low seated height of 1.75 mm makes the operational amplifier suitable for compact designs where space is limited.

Technical Specifications

Operational Amplifiers (Op Amps) LT1013DIDRG4 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

BIPOLAR

Power Supply:

5/±15 V

Total Functions:

2

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

No

Low-Offset:

No

Micropower:

Yes

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

1 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

114 dB

Input Offset Voltage Limit:

1000 uV

Minimum Voltage Gain:

500000

Minimum Slew Rate:

0.2 V/us

Nominal Slew Rate:

0.4 V/us

Peak Bias Current:

-38 nA

Maximum Bias Current (IIB) @25 °C:

50 nA

Operational Characteristics

Nominal Supply Voltage:

15 V

Maximum Supply Voltage:

22 V

Maximum Negative Supply Voltage:

-15 V

Minimum Negative Supply Voltage:

-22 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

105 °C (221 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Reflow Peak Time Limit:

30 s

Maximum Supply Current:

1.2 mA

Physical Characteristics

Length:

0.193 in (4.9 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

8

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

SOP8,.25

Trade Compliance

LT1013DIDRG4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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