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TLC4502AMDG4

Texas Instruments

TLC4502AMDG4 by Texas Instruments

TLC4502AMDG4 by Texas Instruments is a dual operational amplifier with low-offset and low-bias features. It operates at a supply voltage of 5V, offers high common mode rejection ratio of 100dB, and has a unity gain bandwidth of 4700kHz. Ideal for military-grade applications requiring precise signal amplification in compact spaces.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 9,049 parts In-Stock

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Digiode

USA . 779 parts In-Stock

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779

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Parana Technologies

USA . 1,190 parts In-Stock

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$5.217

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$5.830

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$5.217

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$5.830

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One Stop Electronics

USA . 1,183 parts In-Stock

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$5.410

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$5.410

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DigiPath Technology Company

USA . 398 parts In-Stock

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$5.745

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398

$5.745

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ChromeModa Solutions

Germany . 1,125 parts In-Stock

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$5.862

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$4.807

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$5.862

$4.807

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IDEA Electronic Components Group

UK . 524 parts In-Stock

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$5.862

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$5.276

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524

$5.862

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$5.276

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AZTECH Wire

Italy . 678 parts In-Stock

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$16.735

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Component Stockers USA

USA . 450 parts In-Stock

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$99.990

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Microchip USA

USA . 1,086 parts In-Stock

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Corphita

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Overview

Discover the exceptional performance and reliability of the TLC4502AMDG4 operational amplifiers by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments delivers top-notch quality and precision engineering in their products. The TLC4502AMDG4 is ideal for a wide range of applications, providing superior functionality and efficiency. Experience the value and benefits of this high-quality product, offering customers unmatched advantages in their projects. Choose Texas Instruments for excellence in operational amplifiers.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is durable and cost-effective, making the product reliable and affordable.

Maximum Input Offset Voltage: 50 uV

Low input offset voltage ensures high precision in signal processing, making it suitable for sensitive applications.

Nominal Common Mode Reject Ratio: 100 dB

High common mode rejection ratio helps in eliminating noise and interference from the input signal, leading to accurate output.

Nominal Supply Voltage / Vsup (V): 5

Operates at a standard supply voltage, making it compatible with common power sources.

Frequency Compensation: YES

Frequency compensation ensures stability and prevents oscillations in the amplifier circuit, making it reliable for various applications.

Nominal Unity Gain Bandwidth: 4700 kHz

High unity gain bandwidth indicates fast response and high-frequency performance, which is important for amplifying signals accurately.

Technology: CMOS

CMOS technology offers low power consumption and high efficiency, making the product suitable for battery-powered or low-power applications.

Architecture: CHOPPER-STAB

Chopper stabilization architecture minimizes offset voltage drift over time and temperature, ensuring accuracy and stability in signal processing.

Technical Specifications

Operational Amplifiers (Op Amps) TLC4502AMDG4 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Chooper Stab

Technology:

CMOS

Power Supply:

5 V

Total Functions:

2

Sub-Category:

Operational Amplifiers

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

Yes

Performance Specifications

Nominal Unity Gain Bandwidth:

4.7 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

100 dB

Input Offset Voltage Limit:

50 uV

Minimum Voltage Gain:

200000

Nominal Slew Rate:

2.5 V/us

Peak Bias Current:

60 pA

Maximum Bias Current (IIB) @25 °C:

60 pA

Operational Characteristics

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

7 V

Maximum Negative Supply Voltage:

0 V

Minimum Negative Supply Voltage:

0 V

Lowest Operating Temperature:

-55 °C (-67 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Reflow Peak Time Limit:

30 s

Maximum Supply Current:

4 mA

Physical Characteristics

Length:

0.193 in (4.9 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

8

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tube

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

SOP8,.25

Trade Compliance

TLC4502AMDG4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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