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TLC193MJG

Texas Instruments

TLC193MJG by Texas Instruments

TLC193MJG by Texas Instruments is a CMOS COMPARATOR with 2 functions, 10000 uV Max Input Offset Voltage, and 0.03 uA Max Average Bias Current. Ideal for MILITARY applications due to its -55 to 125 °C operating temperature range and IN-LINE package style.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,067 parts In-Stock

1+ parts

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2,067

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Vyrian

USA . 1,151 parts In-Stock

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1,151

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 232 parts In-Stock

1+ parts

$1.800

100+ parts

-

1k+ parts

$2.358

10k+ parts

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232

$1.800

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$2.358

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ChromeModa Solutions

Germany . 5,188 parts In-Stock

1+ parts

$2.023

100+ parts

$1.659

1k+ parts

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5,188

$2.023

$1.659

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IDEA Electronic Components Group

UK . 1,119 parts In-Stock

1+ parts

$2.023

100+ parts

-

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$1.821

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1,119

$2.023

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$1.821

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One Stop Electronics

USA . 1,340 parts In-Stock

1+ parts

$9.410

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1,340

$9.410

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AZTECH Wire

Italy . 339 parts In-Stock

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$9.541

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339

$9.541

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Corphita

USA . 1,983 parts In-Stock

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1,983

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DigiPath Technology Company

USA . 1,666 parts In-Stock

1+ parts

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100+ parts

$1.824

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1,666

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$1.824

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Overview

Discover the TLC193MJG by Texas Instruments, a high-quality comparator that offers unmatched precision and reliability. With Texas Instruments' reputation for excellence in manufacturing, this product is perfect for a wide range of applications. From automotive to industrial uses, the TLC193MJG provides exceptional value with its fast response time and low power consumption. Trust Texas Instruments to deliver cutting-edge technology that meets your needs. Choose the TLC193MJG for superior performance and peace of mind.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

This material provides increased durability and protection, making the product suitable for rugged environments.

Maximum Input Offset Voltage: 10000 uV

High input offset voltage tolerance allows for greater flexibility in voltage detection and ensures accurate measurements.

Nominal Supply Voltage / Vsup (V): 5

Standard supply voltage makes it compatible with a wide range of applications and power sources.

Maximum Operating Temperature: 125 °C

Wide operating temperature range ensures reliable performance in various environmental conditions.

Output Type: OPEN-DRAIN

Open-drain output allows for easy interfacing with other devices and circuits, enhancing the versatility of the product.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the product energy-efficient and reliable.

Technical Specifications

Comparators TLC193MJG attributes and parameters. Explore more Comparators devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Technology:

CMOS

Power Supply:

5/10 V

Total Functions:

2

Sub-Category:

Comparators

Output Type:

Open-Drain

Performance Specifications

Maximum Input Offset Voltage:

10 mV

Peak Bias Current:

30 nA

Operational Characteristics

Maximum Supply Current:

90 μA

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

18 V

Lowest Operating Temperature:

-55 °C (-67 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Nominal Response Time:

2.5 µs

Physical Characteristics

Length:

0.377 in (9.58 mm)

Width:

0.3 in (7.62 mm)

Maximum Seated Height:

0.2 in (5.08 mm)

Total Terminals:

8

Terminal Pitch:

0.1 in (2.54 mm)

Terminal Position:

Dual

Terminal Form:

Package Body Material:

Ceramic, Glass-Sealed

Surface Mount:

No

Manufacturing and Reliability

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-GDIP-T8

Packaging and Shipping

Package Code:

DIP

Package Shape:

Package Type:

In-Line

Package Equivalence Code:

DIP8,.3

Trade Compliance

TLC193MJG Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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