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TLC139MDR

Texas Instruments

TLC139MDR by Texas Instruments

TLC139MDR by Texas Instruments is a CMOS comparator with 4 functions, open-drain output type, and 10000 uV max input offset voltage. It operates in a temperature range of -55 to 125 °C and has a supply voltage of 5 V. Ideal for military-grade applications due to its small outline package style and low power consumption of 0.175 mA.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,870 parts In-Stock

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Digiode

USA . 2,096 parts In-Stock

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2,096

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One Stop Electronics

USA . 753 parts In-Stock

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$0.410

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753

$0.410

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Parana Technologies

USA . 780 parts In-Stock

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$2.692

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$3.174

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780

$2.692

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DigiPath Technology Company

USA . 1,329 parts In-Stock

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$2.964

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$2.964

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ChromeModa Solutions

Germany . 4,320 parts In-Stock

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$3.025

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$2.480

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$3.025

$2.480

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IDEA Electronic Components Group

UK . 1,074 parts In-Stock

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$3.025

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$2.722

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1,074

$3.025

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AZTECH Wire

Italy . 398 parts In-Stock

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$13.845

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Corphita

USA . 1,575 parts In-Stock

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Overview

Unlock the power of precision with the TLC139MDR by Texas Instruments, a top-of-the-line comparator designed to meet the highest quality standards. With Texas Instruments' renowned reputation for excellence in manufacturing, this small outline package boasts a wide range of applications, from industrial automation to automotive electronics. Experience the unparalleled value and benefits of this high-performance device, offering fast response times and low power consumption. Elevate your projects with the TLC139MDR and discover the difference that superior technology can make.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material of the package body provides durability and protection for the internal components of the comparator.

Maximum Input Offset Voltage: 10000 uV

The high maximum input offset voltage ensures accurate and reliable performance of the comparator even under varying input conditions.

Maximum Supply Voltage Limit: 18 V

The high supply voltage limit allows for compatibility with a wide range of power supply options, making this comparator versatile in different applications.

Output Type: OPEN-DRAIN

The open-drain output type enables the comparator to sink current, making it suitable for driving external loads and interfacing with other components in a circuit.

Nominal Response Time: 2500 ns

The fast nominal response time of 2500 ns ensures quick and timely signal processing, making this comparator ideal for applications requiring rapid decision-making.

Technology: CMOS

The CMOS technology used in this comparator ensures low power consumption, high speed, and compatibility with a wide range of digital circuits, making it a reliable choice for various applications.

Technical Specifications

Comparators TLC139MDR attributes and parameters. Explore more Comparators devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Technology:

CMOS

Total Functions:

4

Output Type:

Open-Drain

Performance Specifications

Maximum Input Offset Voltage:

10 mV

Peak Bias Current:

30 nA

Operational Characteristics

Maximum Supply Current:

175 μA

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

18 V

Lowest Operating Temperature:

-55 °C (-67 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Nominal Response Time:

2.5 µs

Physical Characteristics

Length:

0.341 in (8.65 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

14

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G14

Packaging and Shipping

Package Code:

SOP

Package Shape:

Package Type:

Small Outline

Trade Compliance

TLC139MDR Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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