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TLC04MJGB

Texas Instruments

TLC04MJGB by Texas Instruments

TLC04MJGB by Texas Instruments is a CMOS active filter with 8 terminals and a max supply current of 3 mA. It operates at temperatures ranging from -55 to 125 °C and is ideal for military applications requiring lowpass Butterworth response type filters.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Vyrian

USA . 6,889 parts In-Stock

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Digiode

USA . 2,138 parts In-Stock

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One Stop Electronics

USA . 1,381 parts In-Stock

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$1.690

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$1.690

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AZTECH Wire

Italy . 635 parts In-Stock

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$4.938

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635

$4.938

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Parana Technologies

USA . 479 parts In-Stock

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$20.618

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$1,914.670

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$18.556

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479

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$18.556

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DigiPath Technology Company

USA . 1,352 parts In-Stock

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$22.703

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ChromeModa Solutions

Germany . 752 parts In-Stock

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$23.166

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$18.996

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IDEA Electronic Components Group

UK . 94 parts In-Stock

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$23.166

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$22.008

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$20.849

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Corphita

USA . 57 parts In-Stock

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Overview

Elevate your audio and signal processing applications with the TLC04MJGB from Texas Instruments. Crafted with precision and expertise, this active filter offers unparalleled quality and reliability. Designed for military-grade performance, this switched capacitor filter provides smooth and accurate lowpass response, making it ideal for a wide range of applications. With its compact design and low power consumption, the TLC04MJGB delivers exceptional value and benefits to customers seeking superior performance in their projects. Upgrade your electronics with the TLC04MJGB and experience the difference that Texas Instruments brings to the table.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

Ceramic and metal-sealed cofired package body material provides excellent durability and reliability, making this active filter suitable for high-performance applications.

Maximum Supply Current (Isup): 3 mA

Low maximum supply current requirement of 3 mA helps in reducing power consumption, making it energy-efficient.

Screening Level: 38535Q/M;38534H;883B

Compliance with screening levels 38535Q/M, 38534H, and 883B ensures high quality and reliability in performance, making it suitable for critical applications.

Technology: CMOS

CMOS technology ensures low power consumption and compatibility with a wide range of systems, enhancing the versatility of this active filter.

Package Shape: RECTANGULAR

Rectangular package shape allows for efficient space utilization and easy integration into electronic circuits.

Terminal Form: THROUGH-HOLE

Through-hole terminal form provides strong mechanical connections and ease of soldering, ensuring robust performance.

Active Filter Type: SWITCHED CAPACITOR FILTER

Switched capacitor filter design offers precise filtering capabilities and enables the adjustment of filter parameters, making it ideal for signal processing applications.

Power Supplies (V): +-2.5/+-5

Wide range of power supply voltages of +/-2.5V and +/-5V provide flexibility in system integration and compatibility with different power sources.

No. of Terminals: 8

Having 8 terminals allows for enhanced connectivity options and the ability to accommodate various input and output configurations.

Package Style (Meter): IN-LINE

In-line package style offers convenient installation and space-saving design, making it suitable for applications with limited space constraints.

Maximum Operating Temperature: 125 °C

High maximum operating temperature of 125°C ensures reliable performance in demanding environmental conditions.

Terminal Pitch: 2.54 mm

Terminal pitch of 2.54 mm provides easy connections and compatibility with standard spacing configurations, facilitating installation and assembly.

Minimum Operating Temperature: -55 °C

Low minimum operating temperature of -55°C allows for operation in extreme cold environments, expanding the range of applications where this active filter can be used.

Terminal Position: DUAL

Dual terminal position offers increased versatility in circuit design and allows for multiple connection options, enhancing flexibility in system integration.

Response Type: LOWPASS

Lowpass response type ensures that only low-frequency signals are passed through the filter, providing effective noise reduction and signal clarity.

Transfer Characteristics: BUTTERWORTH

Butterworth transfer characteristics offer maximally flat response in the passband, providing precise filtering with minimal distortion, making it suitable for various audio and communications applications.

Temperature Grade: MILITARY

Military-grade temperature grade ensures high reliability and performance in harsh environments, making this active filter well-suited for rugged applications.

Technical Specifications

Active Filters TLC04MJGB attributes and parameters. Explore more Active Filters devices from Texas Instruments

Electrical Characteristics

Maximum Supply Current (Isup):

3 mA

Power Supply:

±2.5/±5 V

Performance Parameters

Semiconductor Technology:

CMOS

Response Type:

Filter Technology:

Transfer Characteristics:

Butterworth

Filter Order:

4th

Environmental Characteristics

Maximum Operating Temperature:

125 °C (257 °F)

Minimum Operating Temperature:

-55 °C (-67 °F)

Temperature Grade:

Connectivity

Total Functions:

1

Total Terminals:

8

Terminal Form:

Terminal Pitch:

0.1 in (2.54 mm)

Terminal Position:

Dual

Physical Characteristics

Package Style:

In-Line

Form Factor:

Rectangular

Package Code:

DIP

Package Equivalence Code:

DIP8,.3

Package Body Material:

Ceramic, Metal-Sealed Cofired

Surface Mounting:

No

JESD-30 Code:

R-XDIP-T8

Additional Features

Screening Standard:

38535Q/M;38534H;883B

Qualified:

No

Trade Compliance

TLC04MJGB Active Filters trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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