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LTC1060ACN

Texas Instruments

LTC1060ACN by Texas Instruments

LTC1060ACN by Texas Instruments is a CMOS active filter with 2 functions, operating at -40 to 85°C. It has a max supply current of 12mA and supports various transfer characteristics like Butterworth and Chebyshev. Ideal for industrial applications requiring switched capacitor filters in a rectangular package with 20 terminals.

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Lifecycle Status

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7

In-Stock Inventory

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Vyrian

USA . 4,872 parts In-Stock

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Digiode

USA . 4,751 parts In-Stock

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Anansix

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ACDS - Activité Composants Distribution Service

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Holdelec - ElecDif-Pro

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North Shore Components

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Electronic Expediters

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One Stop Electronics

USA . 1,446 parts In-Stock

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$1.690

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Semicontronic

India . 1,649 parts In-Stock

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$2.623

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$2.609

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ChromeModa Solutions

Germany . 448 parts In-Stock

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$5.027

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$4.122

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MARBEL Systems

Belgium . 3,255 parts In-Stock

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Texas Native Microelectronics

USA . 100 parts In-Stock

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Parana Technologies

USA . 3,055 parts In-Stock

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IDEA Electronic Components Group

UK . 2,143 parts In-Stock

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AZTECH Wire

Italy . 866 parts In-Stock

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Kenton Components

USA . 128 parts In-Stock

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DigiPath Technology Company

USA . 2,773 parts In-Stock

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Qasali Group International

UK . 77 parts In-Stock

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Corphita

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Corohmni

South Africa . 150 parts In-Stock

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Infinite Electronics LLP (Excess)

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Assy Fe

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Overview

Discover the LTC1060ACN by Texas Instruments, a top-quality active filter designed to deliver exceptional performance in a variety of applications. Manufactured by industry leader Texas Instruments, this product offers unparalleled value and benefits to customers seeking reliable and efficient filtering solutions. With its advanced CMOS technology and versatile design, the LTC1060ACN is ideal for a wide range of uses, from audio processing to instrumentation. Experience the advantages of this high-grade component and elevate your projects to new heights with Texas Instruments.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used for the package body makes the product durable and resistant to environmental factors, ensuring a longer lifespan.

Maximum Supply Current (Isup): 12 mA

The low maximum supply current requirement of 12 mA makes the product energy-efficient and suitable for applications where power consumption needs to be minimized.

No. of Functions: 2

Having 2 functions allows for more flexibility and options in filtering signals, making the product versatile for different applications.

Technology: CMOS

The CMOS technology used in the product ensures low power consumption and high noise immunity, making it a reliable choice for filtering tasks.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature of 85°C, the product can withstand elevated temperatures, making it suitable for industrial applications.

Technical Specifications

Active Filters LTC1060ACN attributes and parameters. Explore more Active Filters devices from Texas Instruments

Electrical Characteristics

Maximum Supply Current (Isup):

12 mA

Power Supply:

±2.37/±8/4.74/16 V

Performance Parameters

Semiconductor Technology:

CMOS

Response Type:

Filter Technology:

Transfer Characteristics:

Butterworth/Bessel/Elliptical/Chebyshev

Filter Order:

2nd

Environmental Characteristics

Maximum Operating Temperature:

85 °C (185 °F)

Minimum Operating Temperature:

-40 °C (-40 °F)

Temperature Grade:

Connectivity

Total Functions:

2

Total Terminals:

20

Terminal Form:

Terminal Pitch:

0.1 in (2.54 mm)

Terminal Position:

Dual

Physical Characteristics

Package Style:

In-Line

Form Factor:

Rectangular

Package Code:

DIP

Package Equivalence Code:

DIP20,.3

Package Body Material:

Plastic/Epoxy

Surface Mounting:

No

JESD-30 Code:

R-PDIP-T20

Additional Features

Qualified:

No

Trade Compliance

LTC1060ACN Active Filters trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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