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TISP83121D

Texas Instruments

TISP83121D by Texas Instruments

TISP83121D by Texas Instruments is a Silicon Surge Protector with 200mA DC Gate Trigger Current, 22A Non Repetitive Peak On-state Current, and 1.8V Max DC Gate Trigger Voltage. Ideal for protecting electronic circuits from voltage surges in applications requiring surge protection like telecommunications equipment.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,852 parts In-Stock

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3,852

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Vyrian

USA . 2,890 parts In-Stock

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2,890

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Bristol Electronics

USA . 2,073 parts In-Stock

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2,073

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 725 parts In-Stock

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725

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A2Z Electronics, Inc.

USA . 515 parts In-Stock

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515

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 2,024 parts In-Stock

1+ parts

$3.703

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-

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$4.205

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2,024

$3.703

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$4.205

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IDEA Electronic Components Group

UK . 1,130 parts In-Stock

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$4.161

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$3.745

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1,130

$4.161

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$3.745

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ChromeModa Solutions

Germany . 890 parts In-Stock

1+ parts

$4.161

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$3.412

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890

$4.161

$3.412

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AZTECH Wire

Italy . 477 parts In-Stock

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$6.855

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477

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One Stop Electronics

USA . 156 parts In-Stock

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$28.100

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156

$28.100

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DigiPath Technology Company

USA . 2,102 parts In-Stock

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$3.752

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$3.752

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Corphita

USA . 1,178 parts In-Stock

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Overview

Unleash the power of protection with the TISP83121D by Texas Instruments. As a leader in semiconductor manufacturing, Texas Instruments delivers top-quality silicon surge protectors that guarantee safety and reliability. Ideal for a wide range of applications, this device offers unparalleled value and benefits to customers looking for robust protection against voltage spikes. Trust Texas Instruments to provide cutting-edge solutions that ensure peace of mind and security for your electronic devices.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 200 mA

Higher trigger current ensures reliable and efficient protection against surges.

Non Repetitive Peak On-state Current: 22 A

Capable of handling high surge currents without damage, making it suitable for harsh environments.

Surface Mount: YES

Easier to mount and install in various electronic devices.

Maximum Leakage Current: 0.001 mA

Low leakage current ensures minimal power loss and increased efficiency.

Maximum Operating Temperature: 70 °C

Can operate reliably at high temperatures, suitable for industrial applications.

Trigger Device Type: SILICON SURGE PROTECTOR

Utilizes advanced silicon technology for better surge protection performance.

Minimum Operating Temperature: 0 °C

Can operate in low temperature environments without any issues.

Maximum DC Gate Trigger Voltage: 1.8 V

Low trigger voltage ensures faster response to surge events for better protection.

Repetitive Peak Off-state Voltage: 100 V

Capable of blocking high voltages to protect sensitive electronic components.

Technical Specifications

Silicon Surge Protectors TISP83121D attributes and parameters. Explore more Silicon Surge Protectors devices from Texas Instruments

Specs

Maximum DC Gate Trigger Current:

200 mA

Maximum DC Gate Trigger Voltage:

1.8 V

Maximum Leakage Current:

.001 mA

Non Repetitive Peak On-state Current:

22 A

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Repetitive Peak Off-state Voltage:

100 V

Sub-Category:

Other Trigger Devices

Surface Mount:

YES

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

Trade Compliance

TISP83121D Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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