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TIL99

Texas Instruments

TIL99 by Texas Instruments

TIL99 by Texas Instruments is a phototransistor with max temp of 125°C and min temp of -60°C. It has a max power dissipation of 0.25W, on-state current of 0.05A, and response time of 8μs. Ideal for applications requiring precise light detection in harsh environments.

Median Price

$8.960

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

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Bristol Electronics

USA . 55 parts In-Stock

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$8.960

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$4.182

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Vyrian

USA . 6,514 parts In-Stock

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Digiode

USA . 4,871 parts In-Stock

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Electronic Expediters

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Resion

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ACDS - Activité Composants Distribution Service

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Standard Data Resources

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First Choice Components Inc.

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R&J Components

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Parana Technologies

USA . 1,730 parts In-Stock

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$0.509

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$1.628

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DigiPath Technology Company

USA . 2,319 parts In-Stock

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$0.561

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$0.516

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ChromeModa Solutions

Germany . 4,507 parts In-Stock

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$0.572

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$0.469

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IDEA Electronic Components Group

UK . 2,084 parts In-Stock

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One Stop Electronics

USA . 1,089 parts In-Stock

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$11.100

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AZTECH Wire

Italy . 416 parts In-Stock

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Corphita

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Assy Fe

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Perfect Parts

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Cyclops Electronics Ltd (Excess)

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Overview

Upgrade your projects with the TIL99 Phototransistor by Texas Instruments. With a wide operating temperature range and fast response time, this high-quality component is perfect for applications requiring precision sensing and detection. Whether you're designing automation systems, security devices, or industrial controls, the TIL99 delivers reliable performance and accurate results. Trust in Texas Instruments' reputation for excellence and choose the TIL99 for your next project.

Feature Benefit Bullets

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this phototransistor can withstand extreme environments without malfunctioning.

Minimum Operating Temperature: -60 °C

The low minimum operating temperature ensures that this phototransistor can also function effectively in cold climates or applications.

Maximum Power Dissipation: 0.25 W

The low power dissipation of this phototransistor makes it energy efficient and reduces the risk of overheating during prolonged use.

Maximum Dark Current: 100 nA

The low dark current of this phototransistor results in minimal noise and high sensitivity in low light conditions.

Maximum Response Time: 0.000008 s

With a very fast response time, this phototransistor can quickly react to changes in light levels, making it ideal for high-speed applications.

Mounting Feature: THROUGH HOLE MOUNT

The through hole mounting feature allows for easy and secure installation, ensuring stability and reliability in various setups.

Maximum On State Current: 0.05 A

Capable of handling a high on-state current, this phototransistor is suitable for applications requiring robust performance and consistent output.

Technical Specifications

Phototransistors TIL99 attributes and parameters. Explore more Phototransistors devices from Texas Instruments

Specs

Maximum Dark Current:

100 nA

Mounting Feature:

Maximum On State Current:

.05 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-60 Cel

Maximum Power Dissipation:

.25 W

Maximum Response Time:

.000008 s

Sub-Category:

Photo Transistors

Trade Compliance

TIL99 Optoelectronics trade compliance attributes, and parameters.

ECCN

3A001.A.2.B

ECCN Governance

EAR

NSN

5980-01-150-5019, 5980011505019

NIIN

011505019

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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