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THS4275DRG4

Texas Instruments

THS4275DRG4 by Texas Instruments

THS4275DRG4 by Texas Instruments is an 8-terminal video preamplifier with a supply voltage range of 2.5V to 7.5V, ideal for industrial applications. With a small outline package style and gull wing terminal form, it operates b/w -40°C to 85°C, making it suitable for audio and video amplification in various electronic devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,078 parts In-Stock

1+ parts

-

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8,078

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Digiode

USA . 2,073 parts In-Stock

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2,073

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,180 parts In-Stock

1+ parts

$2.524

100+ parts

$234.395

1k+ parts

$2.272

10k+ parts

-

1,180

$2.524

$234.395

$2.272

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DigiPath Technology Company

USA . 2,110 parts In-Stock

1+ parts

$2.779

100+ parts

-

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2,110

$2.779

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IDEA Electronic Components Group

UK . 1,744 parts In-Stock

1+ parts

$2.836

100+ parts

-

1k+ parts

$2.552

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1,744

$2.836

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$2.552

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ChromeModa Solutions

Germany . 1,357 parts In-Stock

1+ parts

$2.836

100+ parts

$2.326

1k+ parts

-

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1,357

$2.836

$2.326

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One Stop Electronics

USA . 272 parts In-Stock

1+ parts

$13.800

100+ parts

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272

$13.800

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AZTECH Wire

Italy . 331 parts In-Stock

1+ parts

$14.110

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331

$14.110

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Component Stockers USA

USA . 488 parts In-Stock

1+ parts

$99.990

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488

$99.990

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Microchip USA

USA . 4,363 parts In-Stock

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4,363

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Corphita

USA . 1,801 parts In-Stock

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1,801

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Overview

Experience unparalleled audio and video amplification with the THS4275DRG4 from Texas Instruments. Known for their top-notch quality and reliability, Texas Instruments delivers cutting-edge technology in every product they offer. This video preamplifier is perfect for a wide range of applications, providing exceptional performance and precision. Enhance your audio and video projects with the value and benefits that only Texas Instruments can provide. Elevate your work to the next level with the THS4275DRG4.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material makes the amplifier lightweight and durable, perfect for portable or stationary applications.

Surface Mount: YES

Surface mount capability allows for easy integration onto circuit boards, saving space and simplifying assembly.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, this amplifier can function reliably in a variety of environments without overheating.

Minimum Operating Temperature: -40 °C

Its low minimum operating temperature ensures that the amplifier can perform well even in colder conditions.

Minimum Supply Voltage (Vsup): 2.5 V

The low minimum supply voltage allows for efficient power usage and compatibility with a wide range of power sources.

Technical Specifications

Audio & Video Amplifiers THS4275DRG4 attributes and parameters. Explore more Audio & Video Amplifiers devices from Texas Instruments

Specs

Additional Features:

IT CAN ALSO OPERATE WITH 5V TO 15 V SINGLE SUPPLY

General IC Type:

JESD-30 Code:

R-PDSO-G8

Length:

4.9 mm

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Maximum Supply Voltage (Vsup):

7.5 V

Minimum Supply Voltage (Vsup):

2.5 V

Surface Mount:

YES

Temperature Grade:

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

3.9 mm

Trade Compliance

THS4275DRG4 General Purpose ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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