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THS4062IDGNG4

Texas Instruments

THS4062IDGNG4 by Texas Instruments

THS4062IDGNG4 by Texas Instruments is a video amplifier IC with 2 functions, operating temperature range of -40 to 85°C. It has a nominal bandwidth of 180 kHz and supports supply voltage from 4.5V to 16V. Ideal for audio/video applications requiring high-quality signal amplification in industrial settings.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 7,208 parts In-Stock

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Digiode

USA . 4,700 parts In-Stock

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4,700

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Nova Conductors

Japan . 84 parts In-Stock

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Parana Technologies

USA . 1,093 parts In-Stock

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$1.240

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$2.018

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$1.240

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$2.018

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DigiPath Technology Company

USA . 1,322 parts In-Stock

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$1.365

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$1.256

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$1.365

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ChromeModa Solutions

Germany . 4,240 parts In-Stock

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$1.393

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$1.142

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$1.393

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IDEA Electronic Components Group

UK . 1,557 parts In-Stock

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$1.393

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$1.254

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$1.254

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One Stop Electronics

USA . 169 parts In-Stock

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$2.800

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169

$2.800

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AZTECH Wire

Italy . 664 parts In-Stock

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$17.980

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$17.980

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Ampacity Inc.

Singapore . 647 parts In-Stock

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$19.800

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647

$19.800

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Continental Prestige Electronics

USA . 6,117 parts In-Stock

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Argo Parts USA

USA . 3,252 parts In-Stock

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Aranea Global

USA . 2,000 parts In-Stock

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Corphita

USA . 888 parts In-Stock

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Overview

Experience top-notch audio and video amplification with the THS4062IDGNG4 by Texas Instruments. Crafted with precision and expertise, this high-quality product offers unparalleled performance in a compact package. Ideal for a wide range of applications in the audio and video industry, this amplifier delivers crystal-clear sound and sharp images. Upgrade your system today and enjoy the benefits of superior technology and reliability that only Texas Instruments can provide.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic material is lightweight and durable, making the product easy to handle and resistant to damage.

Surface Mount: YES

Surface mount technology allows for easy and efficient integration into circuit boards, saving space and reducing assembly time.

No. of Functions: 2

Having multiple functions in a single package saves cost and space in the overall design of the amplifier.

Package Shape: SQUARE

Square package shape is easy to handle and can be efficiently arranged on a circuit board.

General IC Type: VIDEO AMPLIFIER

Designed specifically for video signal amplification, ensuring high-quality video output.

No. of Terminals: 8

Having sufficient terminals allows for easy connectivity and integration into the circuitry.

Technology: BIPOLAR

Bipolar technology offers high performance and reliability in video amplification applications.

Nominal Bandwidth: 180 kHz

High bandwidth capability ensures accurate and high-quality video signal amplification.

Technical Specifications

Audio & Video Amplifiers THS4062IDGNG4 attributes and parameters. Explore more Audio & Video Amplifiers devices from Texas Instruments

Specs

Additional Features:

IT CAN ALSO OPERATE WITH 9V TO 32V SINGLE SUPPLY

Nominal Bandwidth:

180 kHz

General IC Type:

JESD-30 Code:

S-PDSO-G8

JESD-609 Code:

e4

Length:

3 mm

Moisture Sensitivity Level (MSL):

1

No. of Channels:

1

No. of Functions:

2

No. of Terminals:

8

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Seated Height:

1.07 mm

Maximum Supply Voltage (Vsup):

16 V

Minimum Supply Voltage (Vsup):

4.5 V

Surface Mount:

YES

Technology:

BIPOLAR

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

3 mm

Trade Compliance

THS4062IDGNG4 General Purpose ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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