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SNJ54HC20J

Texas Instruments

SNJ54HC20J by Texas Instruments

SNJ54HC20J by Texas Instruments is a CMOS Logic Gates IC with 2 functions, 4 inputs, and 33ns propagation delay at 5V. Ideal for military applications due to MIL-PRF-38535 screening level, it operates b/w -55°C to 125°C temperature range. Package style: IN-LINE, Terminal finish: TIN LEAD, and max power supply current of 0.04 mA.

Median Price

$13.095

Lifecycle Status

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Chip1Stop

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DigiKey

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Verical

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Freelance Electronics

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Digiode

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Bristol Electronics

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Manoshevitz Elec. Sales

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Holdelec - ElecDif-Pro

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Mentor Electronics Marketing, LLC

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Component Sense

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Mil-Aero Solutions, Inc.

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First Choice Components Inc.

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Corphita

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Advanced Electronics

New Zealand . 600 parts In-Stock

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Parana Technologies

USA . 881 parts In-Stock

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DigiPath Technology Company

USA . 1,490 parts In-Stock

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ChromeModa Solutions

Germany . 1,645 parts In-Stock

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IDEA Electronic Components Group

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Overview

Elevate your electronic projects with the SNJ54HC20J logic gates from Texas Instruments. Crafted with high-quality ceramic and glass-sealed materials, this versatile component offers swift propagation delay and reliable performance in a MIL-PRF-38535 screening level package. With two functions and four inputs, this logic gate is ideal for a range of applications. Trust in the renowned manufacturer, Texas Instruments, to deliver consistent quality and precision. Upgrade your designs today with the SNJ54HC20J and experience enhanced efficiency and seamless operation like never before.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

Provides durability and protection for the internal components, ensuring long-term reliability.

Propagation Delay At Nominal Supply: 33 ns

Fast propagation delay allows for quick processing of input signals, enhancing overall performance.

No. of Functions: 2

Having multiple functions in a single component saves space and simplifies circuit design.

Nominal Supply Voltage / Vsup (V): 5

Operates at a standard 5V supply voltage, making it compatible with most circuits and systems.

Maximum Operating Temperature: 125 °C

Can withstand high temperatures, suitable for military applications and harsh environments.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, ideal for energy-efficient designs.

Technical Specifications

Logic Gates SNJ54HC20J attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Family:

HC

JESD-30 Code:

R-GDIP-T14

JESD-609 Code:

e0

Length:

19.56 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

5.2 Amp

No. of Functions:

2

No. of Inputs:

4

No. of Terminals:

14

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

DIP

Package Equivalence Code:

DIP14,.3

Package Shape:

Package Style (Meter):

IN-LINE

Packing Method:

TUBE

Power Supplies (V):

2/6

Maximum Power Supply Current (ICC):

.04 mA

Propagation Delay At Nominal Supply:

33 ns

Propagation Delay (tpd):

165 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Screening Level:

MIL-PRF-38535

Maximum Seated Height:

5.08 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

6 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width:

6.67 mm

Trade Compliance

SNJ54HC20J Logic ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

NSN

5962-01-236-8473, 5962012368473, 5962-01-189-4485, 5962011894485, 5962-01-200-8144, 5962012008144, 5962-01-433-9929, 5962014339929

NIIN

012368473, 011894485, 012008144, 014339929

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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