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SNJ54HC132J

Texas Instruments

SNJ54HC132J by Texas Instruments

SNJ54HC132J by Texas Instruments is a CMOS logic gate with 4 functions, 2 inputs, and a propagation delay of 37ns at 5V. It is MILITARY grade with Schmitt Trigger feature, suitable for applications requiring fast response time and high reliability in harsh environments.

Median Price

$12.330

Lifecycle Status

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26

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1k+

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Rochester

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Digiode

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Sogenti Electronics

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Holdelec - ElecDif-Pro

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Mil-Aero Solutions, Inc.

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Microfarads

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Corphita

USA . 1,662 parts In-Stock

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Parana Technologies

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AZTECH Wire

Italy . 938 parts In-Stock

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Advanced Electronics

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DigiPath Technology Company

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ChromeModa Solutions

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IDEA Electronic Components Group

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Microchip USA

USA . 2,062 parts In-Stock

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Overview

Enhance your electronic projects with the high-quality SNJ54HC132J by Texas Instruments. With a focus on reliability and performance, Texas Instruments is a trusted manufacturer in the industry. This logic gate offers seamless integration and efficient operation, making it ideal for a variety of applications. Whether you're working on a new prototype or upgrading existing systems, this product delivers value, benefits, and advantages that will exceed your expectations. Experience the difference with Texas Instruments and elevate your projects to new heights.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

Provides durability and protection for the components within the logic gates, ensuring long-term reliability.

Propagation Delay At Nominal Supply: 37 ns

Low propagation delay allows for fast signal processing, making this product suitable for applications requiring quick response times.

No. of Functions: 4

Having multiple functions in a single package increases efficiency and reduces the need for additional components.

Screening Level: MIL-PRF-38535

Compliance with military screening standards ensures high quality and reliability, making this product suitable for critical applications.

No. of Inputs: 2

Having 2 inputs allows for basic logic operations to be performed, making this product versatile and suitable for a wide range of applications.

Nominal Supply Voltage / Vsup (V): 5

Operating at a common supply voltage of 5V makes integration with existing circuitry easier and more convenient.

Load Capacitance (CL): 50 pF

The specified load capacitance ensures compatibility with typical loads, making this product easier to integrate into existing systems.

Temperature Grade: MILITARY

Designed to withstand extreme temperatures, making this product suitable for military or harsh environment applications.

Schmitt Trigger: YES

Inclusion of a Schmitt trigger allows for better noise immunity and signal conditioning, improving the overall performance of the logic gates.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making this product energy-efficient and reliable.

Technical Specifications

Logic Gates SNJ54HC132J attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Family:

HC/UH

JESD-30 Code:

R-GDIP-T14

JESD-609 Code:

e0

Length:

19.56 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

5.2 Amp

No. of Functions:

4

No. of Inputs:

2

No. of Terminals:

14

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

DIP

Package Equivalence Code:

DIP14,.3

Package Shape:

Package Style (Meter):

IN-LINE

Packing Method:

TUBE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

2/6

Maximum Power Supply Current (ICC):

.04 mA

Propagation Delay At Nominal Supply:

37 ns

Propagation Delay (tpd):

186 ns

Qualification:

Not Qualified

Schmitt Trigger:

YES

Screening Level:

MIL-PRF-38535

Maximum Seated Height:

5.08 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

6 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

7.62 mm

Trade Compliance

SNJ54HC132J Logic ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

NSN

5962-01-371-6813, 5962013716813

NIIN

013716813

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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