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SN74LVC1G58YZAR

Texas Instruments

SN74LVC1G58YZAR by Texas Instruments

SN74LVC1G58YZAR by Texas Instruments features a propagation delay of 6.3ns, operating at a supply voltage of 1.8V and supporting load capacitance of 50pF. With Schmitt Trigger technology, it is ideal for industrial applications requiring a compact form factor and low power consumption.

Median Price

$0.221

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

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Rochester

USA . 3,000 parts In-Stock

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$0.238

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$0.198

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$0.176

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DigiKey

USA . 3,000 parts In-Stock

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$0.200

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Verical

USA . 3,000 parts In-Stock

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$0.221

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Digiode

USA . 3,817 parts In-Stock

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$0.185

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DigiKey Marketplace

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Vyrian

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Nova Conductors

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Ampacity Inc.

Singapore . 2,719 parts In-Stock

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$0.166

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Corphita

USA . 551 parts In-Stock

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Parana Technologies

USA . 335 parts In-Stock

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$7.898

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$8.453

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ChromeModa Solutions

Germany . 2,165 parts In-Stock

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$8.874

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IDEA Electronic Components Group

UK . 1,101 parts In-Stock

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$7.987

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Corohmni

South Africa . 182 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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Microchip USA

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Continental Prestige Electronics

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DigiPath Technology Company

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Argo Parts USA

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Aranea Global

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Overview

Discover the cutting-edge SN74LVC1G58YZAR by Texas Instruments, a high-quality Other Function Logic IC designed for performance and reliability. With a fast propagation delay of 6.3ns and a compact surface mount package, this IC is perfect for a wide range of applications. From industrial automation to consumer electronics, this versatile component offers unmatched value and benefits. Trust in Texas Instruments' renowned expertise in semiconductor manufacturing and elevate your designs with the SN74LVC1G58YZAR.

Feature Benefit Bullets

Propagation Delay At Nominal Supply: 6.3 ns

Low propagation delay ensures fast response time and efficient operation.

Surface Mount: YES

SMT packaging allows for easy and efficient assembly onto circuit boards.

Nominal Supply Voltage / Vsup (V): 1.8

Operates at a low voltage, making it suitable for power-sensitive applications.

Load Capacitance (CL): 50 pF

Can drive capacitive loads efficiently without compromising performance.

Power Supplies (V): 3.3

Compatible with standard power supply voltages for ease of integration.

Package Style (Meter): GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Compact and space-saving design for applications with limited board space.

Maximum I (ol): 24 Amp

High output current capability for driving loads without external amplification.

Maximum Operating Temperature: 85 °C

Wide temperature range allows for operation in harsh environmental conditions.

Output Characteristics: 3-STATE

3-state output allows for high flexibility and control in connecting multiple devices.

Schmitt Trigger: YES

Schmitt trigger input ensures noise immunity and reliable operation in noisy environments.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity for efficient operation.

Technical Specifications

Other Function Logic ICs SN74LVC1G58YZAR attributes and parameters. Explore more Other Function Logic ICs devices from Texas Instruments

Specs

Family:

LVC/LCX/Z

JESD-30 Code:

R-XBGA-B6

Length:

1.4 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

24 Amp

No. of Functions:

1

No. of Terminals:

6

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

3-STATE

Package Body Material:

UNSPECIFIED

Package Code:

Package Equivalence Code:

BGA6,2X3,20

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

3.3

Propagation Delay At Nominal Supply:

6.3 ns

Qualification:

Not Qualified

Schmitt Trigger:

YES

Maximum Seated Height:

.5 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

.9 mm

Trade Compliance

SN74LVC1G58YZAR Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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