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SN74AUP1G58DBVTE4

Texas Instruments

SN74AUP1G58DBVTE4 by Texas Instruments

SN74AUP1G58DBVTE4 by Texas Instruments is a CMOS logic IC with 26.6ns propagation delay, 30pF load capacitance, and 1.7A max I (ol). It operates at a supply voltage of 1.2/3.3V and has an industrial temperature grade. Ideal for applications requiring low power consumption and fast signal processing in compact electronic devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,161 parts In-Stock

1+ parts

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3,161

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Vyrian

USA . 2,833 parts In-Stock

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2,833

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 316 parts In-Stock

1+ parts

$13.933

100+ parts

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316

$13.933

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Parana Technologies

USA . 1,823 parts In-Stock

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$24.078

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-

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$24.730

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1,823

$24.078

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$24.730

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DigiPath Technology Company

USA . 1,139 parts In-Stock

1+ parts

$26.513

100+ parts

$24.392

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1,139

$26.513

$24.392

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IDEA Electronic Components Group

UK . 892 parts In-Stock

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$27.054

100+ parts

$25.701

1k+ parts

$24.349

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892

$27.054

$25.701

$24.349

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ChromeModa Solutions

Germany . 603 parts In-Stock

1+ parts

$27.054

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$22.184

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603

$27.054

$22.184

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One Stop Electronics

USA . 1,075 parts In-Stock

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$55.000

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1,075

$55.000

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Corphita

USA . 4,647 parts In-Stock

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Overview

Experience the superior quality and unmatched reliability of Texas Instruments with the SN74AUP1G58DBVTE4 logic IC. This small outline, low profile IC offers a fast propagation delay, versatile power supplies, and a wide operating temperature range, making it ideal for a variety of industrial applications. With advanced CMOS technology and 3-state output characteristics, this IC delivers exceptional performance and efficiency. Trust Texas Instruments to provide innovative solutions that exceed expectations in every aspect. Elevate your designs with the SN74AUP1G58DBVTE4 and discover the difference quality makes.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and reliability of the product, making it ideal for various applications.

Propagation Delay At Nominal Supply: 26.6 ns

The low propagation delay ensures fast response times, making the product efficient in time-sensitive applications.

Surface Mount: YES

Being surface mountable allows for easy installation and space-saving on PCBs, making it convenient for integration into electronic designs.

Nominal Supply Voltage / Vsup (V): 1.2

The consistent nominal supply voltage of 1.2V ensures stable operation and compatibility with various power systems.

Output Characteristics: 3-STATE

The 3-state output allows for tri-state logic operation, providing flexibility and control in signal transmission.

Technical Specifications

Other Function Logic ICs SN74AUP1G58DBVTE4 attributes and parameters. Explore more Other Function Logic ICs devices from Texas Instruments

Specs

Family:

AUP/ULP/V

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e4

Length:

2.9 mm

Load Capacitance (CL):

30 pF

Logic IC Type:

Maximum I (ol):

1.7 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

6

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP6,.11,37

Package Shape:

Package Style (Meter):

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

1.2/3.3

Propagation Delay At Nominal Supply:

26.6 ns

Qualification:

Not Qualified

Schmitt Trigger:

YES

Maximum Seated Height:

1.45 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

.8 V

Nominal Supply Voltage / Vsup (V):

1.2

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

1.6 mm

Trade Compliance

SN74AUP1G58DBVTE4 Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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