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SN54LS86AJ

Texas Instruments

SN54LS86AJ by Texas Instruments

SN54LS86AJ by Texas Instruments is a TTL logic gate with 4 functions and 2 inputs. It has a propagation delay of 10.5 ns at 5V, making it suitable for military-grade applications requiring fast response times. With a package style of IN-LINE and through-hole terminal form, it is ideal for use in high-reliability electronic systems.

Median Price

$12.146

Lifecycle Status

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35

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1k+

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Verical

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Rochester

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DigiKey

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American Microsemiconductor Inc.

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Digiode

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First Choice Components Inc.

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J & M Industries LLC

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Ampacity Inc.

Singapore . 44 parts In-Stock

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$8.310

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Parana Technologies

USA . 1,826 parts In-Stock

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$9.463

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DigiPath Technology Company

USA . 15 parts In-Stock

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$9.665

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$8.892

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Corphita

USA . 4,407 parts In-Stock

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ChromeModa Solutions

Germany . 2,898 parts In-Stock

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IDEA Electronic Components Group

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QUARKTWIN TECHNOLOGY LTD

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Overview

Enhance your electronic projects with the SN54LS86AJ logic gate from Texas Instruments, a renowned manufacturer known for its high-quality components. Perfect for a wide range of applications, this logic gate offers reliable performance and fast propagation delay, making it ideal for intricate circuit designs. Trust in Texas Instruments to deliver top-notch products that exceed expectations. Upgrade your projects with the SN54LS86AJ and experience the superior value and benefits it brings to your creations.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

Ceramic and glass-sealed material provides durability and protection for the internal components of the logic gates, ensuring reliability in various operating conditions.

Propagation Delay At Nominal Supply: 10.5 ns

Low propagation delay allows for fast signal processing and efficient operation of the logic gates.

No. of Functions: 4

Having multiple functions in a single component increases the versatility and functionality of the logic gates, leading to more complex circuit designs.

No. of Inputs: 2

Having multiple inputs allows for more input combinations and logic operations to be performed, enhancing the capabilities of the logic gates.

Nominal Supply Voltage / Vsup (V): 5

Operating at a common nominal supply voltage of 5V makes these logic gates compatible with many standard electronic systems and circuits.

Load Capacitance (CL): 15 pF

The low load capacitance of 15 pF reduces signal distortion and interference, improving overall signal integrity in the logic gates.

Power Supplies (V): 5

Consistent power supply voltage of 5V ensures stable and reliable operation of the logic gates in various applications.

No. of Terminals: 14

Having multiple terminals allows for easy connection to external components and facilitates integration into larger electronic systems.

Maximum Seated Height: 5.08 mm

Low seated height makes these logic gates suitable for compact electronic devices with limited space for component installation.

Temperature Grade: MILITARY

Military-grade temperature specifications ensure reliable operation of the logic gates in extreme environmental conditions, making them suitable for critical applications.

Technical Specifications

Logic Gates SN54LS86AJ attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Additional Features:

LG-MAX

Family:

LS

JESD-30 Code:

R-GDIP-T14

JESD-609 Code:

e0

Length:

19.94 mm

Load Capacitance (CL):

15 pF

Logic IC Type:

Maximum I (ol):

.8 Amp

No. of Functions:

4

No. of Inputs:

2

No. of Terminals:

14

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

DIP

Package Equivalence Code:

DIP14,.3

Package Shape:

Package Style (Meter):

IN-LINE

Packing Method:

TUBE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Maximum Power Supply Current (ICC):

10 mA

Propagation Delay At Nominal Supply:

10.5 ns

Propagation Delay (tpd):

30 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

5.08 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

7.62 mm

Trade Compliance

SN54LS86AJ Logic ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

NSN

5962-01-041-3214, 5962010413214, 5962-01-269-3205, 5962012693205, 5962-01-496-5436, 5962014965436

NIIN

010413214, 012693205, 014965436

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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