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SN54HC365J

Texas Instruments

SN54HC365J by Texas Instruments

SN54HC365J by Texas Instruments is a 6-bit bus driver with 29ns propagation delay, operating at 5V. It features a 3-STATE output and can handle up to 6A of current. Ideal for military-grade applications requiring true output polarity control in an inline package style.

Median Price

$9.810

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 23 parts In-Stock

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-

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$9.810

1k+ parts

$8.780

10k+ parts

$8.260

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$9.810

$8.780

$8.260

Distributors (In-Stock)

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Digiode

USA . 3,809 parts In-Stock

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$9.006

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$9.006

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Vyrian

USA . 8,280 parts In-Stock

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ECAB

Sweden . 108 parts In-Stock

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Sogenti Electronics

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Electronic Expediters

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North Shore Components

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Corel Iberica Componentes, S.L.

Spain . 30 parts In-Stock

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Distributors (Availability)

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Andel Nordic

Denmark . 694 parts In-Stock

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$6.794

100+ parts

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$6.522

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$6.522

694

$6.794

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$6.522

$6.522

Corphita

USA . 2,493 parts In-Stock

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$8.532

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AZTECH Wire

Italy . 1,193 parts In-Stock

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$20.870

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Microchip USA

USA . 987 parts In-Stock

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$27.080

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$26.690

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$26.500

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$26.300

987

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$26.690

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$26.300

Parana Technologies

USA . 1,813 parts In-Stock

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$29.058

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$54.929

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DigiPath Technology Company

USA . 1,312 parts In-Stock

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$31.997

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ChromeModa Solutions

Germany . 4,524 parts In-Stock

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$32.650

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$26.773

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IDEA Electronic Components Group

UK . 752 parts In-Stock

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$32.650

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$31.018

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$29.385

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QUARKTWIN TECHNOLOGY LTD

USA . 7,037 parts In-Stock

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Kepictronics

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Assy Fe

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Overview

Unlock seamless data transmission with the Texas Instruments SN54HC365J Bus Driver & Transceivers. Crafted from high-quality ceramic and glass-sealed materials, this military-grade component guarantees reliability in extreme conditions. With a fast propagation delay of 29 ns, it ensures efficient communication across 6 bits. Ideal for applications requiring true output polarity and 3-state output characteristics, the SN54HC365J offers unparalleled value, precision, and performance to customers seeking top-notch electronic solutions.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

Durable and reliable material choice for long-lasting performance.

Propagation Delay At Nominal Supply: 29 ns

Fast propagation delay ensures quick signal transmission.

Nominal Supply Voltage / Vsup (V): 5

Standard voltage requirement for compatibility with many systems.

Output Characteristics: 3-STATE

Allows for high flexibility in controlling the output signal.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity.

Technical Specifications

Bus Driver & Transceivers SN54HC365J attributes and parameters. Explore more Bus Driver & Transceivers devices from Texas Instruments

Specs

Additional Features:

WITH DUAL OUTPUT ENABLE

Control Type:

ENABLE LOW

Count Direction:

UNIDIRECTIONAL

Family:

HC/UH

JESD-30 Code:

R-GDIP-T16

JESD-609 Code:

e0

Length:

19.56 mm

Load Capacitance (CL):

150 pF

Logic IC Type:

Maximum I (ol):

6 Amp

No. of Bits:

6

No. of Functions:

1

No. of Ports:

2

No. of Terminals:

16

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Output Characteristics:

3-STATE

Output Polarity:

TRUE

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

DIP

Package Equivalence Code:

DIP16,.3

Package Shape:

Package Style (Meter):

IN-LINE

Packing Method:

TUBE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

2/6

Maximum Power Supply Current (ICC):

.08 mA

Propagation Delay At Nominal Supply:

29 ns

Propagation Delay (tpd):

180 ns

Qualification:

Not Qualified

Maximum Seated Height:

5.08 mm

Sub-Category:

Bus Driver/Transceivers

Maximum Supply Voltage (Vsup):

6 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

7.62 mm

Trade Compliance

SN54HC365J Logic ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

NSN

5962-01-352-0242, 5962013520242

NIIN

013520242

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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