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SN54HC11J

Texas Instruments

SN54HC11J by Texas Instruments

SN54HC11J by Texas Instruments is a CMOS logic gate with 3 functions and 3 inputs. It has a propagation delay of 30 ns at 5V, making it suitable for military-grade applications. With a max power supply current of 0.04 mA, this through-hole package is ideal for circuits requiring fast response times.

Median Price

$11.650

Lifecycle Status

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1k+

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Arrow

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Avnet

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Rochester

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$9.810

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DigiKey

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Verical

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Freelance Electronics

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Digiode

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Vyrian

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Connector Distribution Corp

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Right Parts Inc.

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Microfarads

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Holdelec - ElecDif-Pro

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Cyclops Electronics Ltd

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PC Components Company LLC

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Parana Technologies

USA . 1,209 parts In-Stock

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Corphita

USA . 3,670 parts In-Stock

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ChromeModa Solutions

Germany . 6,671 parts In-Stock

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IDEA Electronic Components Group

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Advanced Electronics

New Zealand . 500 parts In-Stock

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Authorized Procurement Solutions

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DigiPath Technology Company

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Overview

Unlock unparalleled performance and reliability with the Texas Instruments SN54HC11J Logic Gates. Manufactured with precision and expertise, this product offers a seamless integration into any application requiring high-speed logic functions. With its advanced technology and superior build quality, the SN54HC11J ensures optimal functionality, reduced power consumption, and enhanced efficiency. Elevate your projects to new heights with the unmatched value and benefits that this exceptional product provides. Trust Texas Instruments for all your logic gate needs and experience innovation at its finest.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

This material provides durability and protection for the logic gates, ensuring a longer lifespan and reliable performance.

Propagation Delay At Nominal Supply: 30 ns

Low propagation delay ensures fast response time, making this product suitable for high-speed applications.

No. of Functions: 3

Having multiple functions in a single device allows for more complex logic operations to be performed efficiently.

Nominal Supply Voltage: 5V

Operating at a commonly used supply voltage of 5V makes this product compatible with a wide range of systems and applications.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this product can withstand harsh environmental conditions and operate reliably in various settings.

Technical Specifications

Logic Gates SN54HC11J attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Family:

HC/UH

JESD-30 Code:

R-CDIP-T14

JESD-609 Code:

e0

Length:

19.56 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

5.2 Amp

No. of Functions:

3

No. of Inputs:

3

No. of Terminals:

14

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

DIP

Package Equivalence Code:

DIP14,.3

Package Shape:

Package Style (Meter):

IN-LINE

Packing Method:

TUBE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

2/6

Maximum Power Supply Current (ICC):

.04 mA

Propagation Delay At Nominal Supply:

30 ns

Propagation Delay (tpd):

150 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

5.08 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

6 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

7.62 mm

Trade Compliance

SN54HC11J Logic ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

NSN

5962-01-343-6602, 5962013436602

NIIN

013436602

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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