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SN54HC00TDF1

Texas Instruments

SN54HC00TDF1 by Texas Instruments

SN54HC00TDF1 by Texas Instruments is a CMOS logic gate with 4 functions and 2 inputs. Operating voltage range from 2V to 6V, it has a max output current of 4A. Suitable for surface mount applications in various electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,348 parts In-Stock

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5,348

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Digiode

USA . 2,926 parts In-Stock

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2,926

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Distributors (Availability)

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AZTECH Wire

Italy . 687 parts In-Stock

1+ parts

$5.213

100+ parts

-

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687

$5.213

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Parana Technologies

USA . 1,726 parts In-Stock

1+ parts

$13.382

100+ parts

-

1k+ parts

$13.900

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1,726

$13.382

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$13.900

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DigiPath Technology Company

USA . 1,586 parts In-Stock

1+ parts

$14.735

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1,586

$14.735

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ChromeModa Solutions

Germany . 2,920 parts In-Stock

1+ parts

$15.036

100+ parts

$12.330

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2,920

$15.036

$12.330

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IDEA Electronic Components Group

UK . 1,174 parts In-Stock

1+ parts

$15.036

100+ parts

$14.284

1k+ parts

$13.532

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1,174

$15.036

$14.284

$13.532

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Microchip USA

USA . 2,163 parts In-Stock

1+ parts

$20.890

100+ parts

$20.590

1k+ parts

$20.440

10k+ parts

$20.290

2,163

$20.890

$20.590

$20.440

$20.290

One Stop Electronics

USA . 314 parts In-Stock

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$25.000

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314

$25.000

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Corphita

USA . 1,996 parts In-Stock

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1,996

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Overview

Unlock endless possibilities with the SN54HC00TDF1 by Texas Instruments. This high-quality logic gate offers unparalleled performance and reliability, making it a top choice for a wide range of applications. From industrial automation to consumer electronics, this versatile component provides seamless integration and exceptional value. Trust Texas Instruments to deliver cutting-edge technology that exceeds expectations. Elevate your projects with the SN54HC00TDF1 and experience innovation like never before.

Feature Benefit Bullets

Surface Mount: YES

Surface mount technology allows for easy mounting on PCBs, making this product suitable for compact electronic devices.

No. of Functions: 4

Having 4 functions in one package increases functionality and saves space on the circuit board.

No. of Inputs: 2

With 2 inputs, this logic gate can process multiple signals efficiently.

Package Shape: RECTANGULAR

Rectangular shape is common and easy to work with in circuit design and assembly.

Nominal Supply Voltage / Vsup (V): 5

Operating at 5V makes it compatible with standard logic circuitry.

No. of Terminals: 14

Having 14 terminals allows for versatile connectivity options.

Package Style (Meter): UNCASED CHIP

Uncased chip design simplifies integration into electronic systems and reduces overall size.

Maximum I (ol): 4 Amp

High output current capability enables driving of various loads.

Terminal Position: UPPER

Upper terminal position facilitates easy connections in circuit layout.

Width: 1.0903 mm

Compact width enables placement in tight spaces on the PCB.

Minimum Supply Voltage (Vsup): 2 V

Operating at a low minimum voltage allows for energy-efficient performance.

Length: 1.2553 mm

Short length contributes to space-saving design in electronic applications.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity.

Terminal Form: NO LEAD

No lead terminal form simplifies soldering and assembly processes.

Packing Method: TUBE

Tubular packing ensures protection during transportation and storage.

Maximum Supply Voltage (Vsup): 6 V

Operating within a safe voltage range provides reliability and durability.

Technical Specifications

Logic Gates SN54HC00TDF1 attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Family:

HC

JESD-30 Code:

R-XUUC-N14

Length:

1.2553 mm

Logic IC Type:

Maximum I (ol):

4 Amp

No. of Functions:

4

No. of Inputs:

2

No. of Terminals:

14

Package Body Material:

UNSPECIFIED

Package Code:

DIE

Package Shape:

Package Style (Meter):

UNCASED CHIP

Packing Method:

TUBE

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Supply Voltage (Vsup):

6 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Terminal Form:

Terminal Position:

UPPER

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

1.0903 mm

Trade Compliance

SN54HC00TDF1 Logic ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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