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SM28LVT32SKGD3

Texas Instruments

SM28LVT32SKGD3 by Texas Instruments

SM28LVT32SKGD3 by Texas Instruments is a 2Mx16 NOR flash memory IC with 33554432-bit density. Operating at 12MHz, it has a synchronous mode and serial interface. Ideal for applications requiring high-speed data storage in compact devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,103 parts In-Stock

1+ parts

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8,103

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Digiode

USA . 4,684 parts In-Stock

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4,684

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 73 parts In-Stock

1+ parts

$3.268

100+ parts

-

1k+ parts

$3.794

10k+ parts

-

73

$3.268

-

$3.794

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DigiPath Technology Company

USA . 2,111 parts In-Stock

1+ parts

$3.599

100+ parts

$3.311

1k+ parts

-

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2,111

$3.599

$3.311

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ChromeModa Solutions

Germany . 5,198 parts In-Stock

1+ parts

$3.672

100+ parts

$3.011

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-

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5,198

$3.672

$3.011

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IDEA Electronic Components Group

UK . 592 parts In-Stock

1+ parts

$3.672

100+ parts

-

1k+ parts

$3.305

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592

$3.672

-

$3.305

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Ampacity Inc.

Singapore . 1,376 parts In-Stock

1+ parts

$4.000

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1,376

$4.000

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AZTECH Wire

Italy . 248 parts In-Stock

1+ parts

$14.136

100+ parts

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248

$14.136

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Semicontronic

India . 854 parts In-Stock

1+ parts

$21.000

100+ parts

$20.475

1k+ parts

$20.370

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854

$21.000

$20.475

$20.370

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One Stop Electronics

USA . 1,593 parts In-Stock

1+ parts

$29.000

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1,593

$29.000

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Corphita

USA . 2,342 parts In-Stock

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2,342

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Corohmni

South Africa . 331 parts In-Stock

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331

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Overview

Unlock the power of cutting-edge technology with the SM28LVT32SKGD3 from Texas Instruments. As a leading manufacturer in the industry, Texas Instruments delivers top-quality flash memory solutions that are ideal for a wide range of applications. With its compact size and synchronous operating mode, this product offers unmatched performance and reliability. Experience seamless data storage and retrieval at a maximum clock frequency of 12 MHz. Trust Texas Instruments to provide you with innovative solutions that exceed your expectations. Elevate your projects with the SM28LVT32SKGD3 today!

Feature Benefit Bullets

Surface Mount: YES

Surface mount technology allows for compact and efficient placement on circuit boards, saving space and reducing manufacturing costs.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for precise timing and data transfer, improving overall performance and reliability.

Nominal Supply Voltage (Vsup): 1.9V

The nominal supply voltage of 1.9V provides efficient power consumption while maintaining stable operation.

Organization: 2MX16

Organized as 2 million words of 16 bits each, this flash memory offers high capacity and efficient data storage capabilities.

Maximum Clock Frequency (fCLK): 12 MHz

With a high maximum clock frequency of 12 MHz, this flash memory can handle fast data transfer rates for demanding applications.

Technology: CMOS

Complementary metal-oxide-semiconductor (CMOS) technology provides low power consumption, high noise immunity, and compatibility with a wide range of devices.

Memory Density: 33554432 bit

With a memory density of 33,554,432 bits, this flash memory can store a large amount of data in a small footprint.

Technical Specifications

Flash Memory SM28LVT32SKGD3 attributes and parameters. Explore more Flash Memory devices from Texas Instruments

Specs

Maximum Clock Frequency (fCLK):

12 MHz

JESD-30 Code:

R-XUUC-N150

Length:

11.509 mm

Memory Density:

33554432 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Terminals:

150

No. of Words:

2097152 words

No. of Words Code:

2M

Operating Mode:

SYNCHRONOUS

Organization:

2MX16

Package Body Material:

UNSPECIFIED

Package Code:

DIE

Package Shape:

Package Style (Meter):

UNCASED CHIP

Parallel or Serial:

SERIAL

Programming Voltage (V):

1.8

Maximum Supply Voltage (Vsup):

1.98 V

Minimum Supply Voltage (Vsup):

1.8 V

Nominal Supply Voltage / Vsup (V):

1.9

Surface Mount:

YES

Technology:

CMOS

Terminal Form:

NO LEAD

Terminal Position:

UPPER

Type:

NOR TYPE

Width:

4.6 mm

Trade Compliance

SM28LVT32SKGD3 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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