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SM28VLT32SKGD3

Texas Instruments

SM28VLT32SKGD3 by Texas Instruments

The Texas Instruments SM28VLT32SKGD3 is a 2MX16 Flash Memory with 16-bit memory width and SPI serial bus type. It operates synchronously at up to 1 MHz clock frequency, with a temperature range of -55 to 210 °C. Ideal for military-grade applications requiring high endurance and secure data storage.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,477 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

-

3,477

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-

-

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Digiode

USA . 802 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

802

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-

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 911 parts In-Stock

1+ parts

$3.061

100+ parts

-

1k+ parts

$3.576

10k+ parts

-

911

$3.061

-

$3.576

-

DigiPath Technology Company

USA . 1,493 parts In-Stock

1+ parts

$3.370

100+ parts

$3.101

1k+ parts

-

10k+ parts

-

1,493

$3.370

$3.101

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ChromeModa Solutions

Germany . 5,377 parts In-Stock

1+ parts

$3.439

100+ parts

$2.820

1k+ parts

-

10k+ parts

-

5,377

$3.439

$2.820

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IDEA Electronic Components Group

UK . 386 parts In-Stock

1+ parts

$3.439

100+ parts

-

1k+ parts

$3.095

10k+ parts

-

386

$3.439

-

$3.095

-

Advanced Electronics

New Zealand . 1,500 parts In-Stock

1+ parts

$5.616

100+ parts

$5.560

1k+ parts

$5.335

10k+ parts

-

1,500

$5.616

$5.560

$5.335

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AZTECH Wire

Italy . 514 parts In-Stock

1+ parts

$8.440

100+ parts

-

1k+ parts

-

10k+ parts

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514

$8.440

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One Stop Electronics

USA . 289 parts In-Stock

1+ parts

$22.000

100+ parts

-

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289

$22.000

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Microchip USA

USA . 2,919 parts In-Stock

1+ parts

$437.500

100+ parts

$421.590

1k+ parts

$413.630

10k+ parts

$405.680

2,919

$437.500

$421.590

$413.630

$405.680

Corphita

USA . 75 parts In-Stock

1+ parts

-

100+ parts

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75

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Overview

Unlock the power of cutting-edge technology with the SM28VLT32SKGD3 by Texas Instruments. This flash memory device boasts unparalleled quality and reliability, thanks to the renowned manufacturer behind it. Ideal for a wide range of applications, this product offers customers superior value and benefits. Whether you're looking to enhance your military-grade equipment or streamline your data storage solutions, the SM28VLT32SKGD3 is the perfect choice. Experience seamless performance and unmatched durability with this innovative solution from Texas Instruments.

Feature Benefit Bullets

Surface Mount: YES

Allows for easy and secure installation on PCBs, saving space and simplifying assembly process.

Operating Mode: SYNCHRONOUS

Ensures precise and coordinated data transfer, ideal for high-speed applications.

Nominal Supply Voltage (Vsup): 1.9V

Low voltage requirement is energy-efficient and reduces power consumption.

Package Style: UNCASED CHIP

Compact design for efficient use of board space.

Maximum Operating Temperature: 210 °C

Suitable for harsh environmental conditions, ensuring reliability in extreme temperatures.

Memory Density: 33554432 bit

Provides ample storage capacity for large data files and applications.

Memory IC Type: FLASH

Flash memory offers non-volatile storage, retaining data even when power is turned off.

Technical Specifications

Flash Memory SM28VLT32SKGD3 attributes and parameters. Explore more Flash Memory devices from Texas Instruments

Specs

Maximum Clock Frequency (fCLK):

1 MHz

Data Polling:

YES

Endurance:

1000 Write/Erase Cycles

JESD-30 Code:

R-XUUC-N150

Length:

11.509 mm

Memory Density:

33554432 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Terminals:

150

No. of Words:

2097152 words

No. of Words Code:

2M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

210 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

2MX16

Package Body Material:

UNSPECIFIED

Package Code:

DIE

Package Shape:

Package Style (Meter):

UNCASED CHIP

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

NOT SPECIFIED

Programming Voltage (V):

1.8

Serial Bus Type:

SPI

Maximum Supply Current:

160 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3.1 V

Nominal Supply Voltage / Vsup (V):

1.9

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Position:

UPPER

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Toggle Bit:

YES

Width:

4.6 mm

Write Protection:

HARDWARE

Trade Compliance

SM28VLT32SKGD3 Memory ICs trade compliance attributes, and parameters.

ECCN

3A001.A.2.A

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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