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ONET4211LDRGETG4

Texas Instruments

ONET4211LDRGETG4 by Texas Instruments

ONET4211LDRGETG4 by Texas Instruments is a CMOS interface IC with 24 terminals, operating at 3.3V. It has a package style of CHIP CARRIER and is suitable for industrial applications requiring an operating temperature range from -40 to 85°C. This surface-mount IC features a max supply voltage of 3.6V and terminal finish in nickel palladium gold, making it ideal for various function interface requirements.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,490 parts In-Stock

1+ parts

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8,490

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Digiode

USA . 2,475 parts In-Stock

1+ parts

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2,475

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 192 parts In-Stock

1+ parts

$6.035

100+ parts

-

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192

$6.035

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Parana Technologies

USA . 459 parts In-Stock

1+ parts

$12.638

100+ parts

-

1k+ parts

$13.099

10k+ parts

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459

$12.638

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$13.099

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DigiPath Technology Company

USA . 2,162 parts In-Stock

1+ parts

$13.916

100+ parts

$12.803

1k+ parts

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2,162

$13.916

$12.803

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IDEA Electronic Components Group

UK . 1,478 parts In-Stock

1+ parts

$14.200

100+ parts

$13.490

1k+ parts

$12.780

10k+ parts

-

1,478

$14.200

$13.490

$12.780

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ChromeModa Solutions

Germany . 1,334 parts In-Stock

1+ parts

$14.200

100+ parts

$11.644

1k+ parts

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1,334

$14.200

$11.644

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One Stop Electronics

USA . 1,549 parts In-Stock

1+ parts

$17.500

100+ parts

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1,549

$17.500

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Corphita

USA . 2,694 parts In-Stock

1+ parts

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2,694

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Perfect Parts

USA . 874 parts In-Stock

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874

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Overview

Experience unmatched quality and reliability with the ONET4211LDRGETG4 by Texas Instruments, a leading manufacturer in the industry. This innovative product falls under the category of Other Function Interface ICs, offering a wide range of applications for various electronic devices. With a maximum supply voltage of 3.6 V and a compact package shape, this interface circuit provides exceptional performance in industrial settings. Trust Texas Instruments to deliver cutting-edge technology with the ONET4211LDRGETG4, ensuring top-notch functionality and efficiency for all your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material provides durability and protection for the integrated circuits inside.

Surface Mount: YES

Surface mount technology allows for easier and more efficient PCB assembly, reducing production costs.

Maximum Supply Voltage: 3.6 V

Support for a higher supply voltage gives flexibility in power requirements for various applications.

Package Shape: SQUARE

The square package shape helps in efficient space utilization on the PCB.

Power Supplies (V): 3.3

The availability of a stable and commonly used power supply voltage simplifies circuit design.

No. of Terminals: 24

Having a higher number of terminals allows for more connections and functionality within the device.

Package Style (Meter): CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

The combination of different package styles offers versatility in mounting and thermal management options.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, the IC can withstand harsh environmental conditions.

Minimum Operating Temperature: -40 °C

The ability to operate at low temperatures enables use in a wide range of applications and environments.

Terminal Finish: NICKEL PALLADIUM GOLD

This terminal finish provides excellent conductivity and corrosion resistance for reliable connections.

Terminal Position: QUAD

Quad terminal positioning allows for easy and secure placement on the PCB during assembly.

Maximum Seated Height: 1 mm

A low seated height helps in achieving a slim and compact overall product design.

Width: 4 mm

The narrow width makes it suitable for applications where space is a constraint.

Maximum Time At Peak Reflow Temperature (s): 30

The IC can endure the reflow process for up to 30 seconds, ensuring proper soldering during assembly.

Peak Reflow Temperature °C: 260

The high peak reflow temperature capability allows for reliable solder joints during assembly.

Length: 4 mm

The compact length enhances the overall space-saving design of the product.

Temperature Grade: INDUSTRIAL

Suitable for industrial applications where reliability and durability are key requirements.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity for efficient operation.

Terminal Form: NO LEAD

The use of lead-free terminal form is environmentally friendly and compliant with regulations.

Nominal Supply Voltage: 3.3 V

The nominal supply voltage of 3.3V is a common standard, making it compatible with various systems.

Terminal Pitch: 0.5 mm

The fine terminal pitch allows for high-density mounting on the PCB, saving space.

Moisture Sensitivity Level (MSL): 2

MSL level 2 indicates moderate sensitivity to moisture, suitable for standard handling and storage conditions.

Interface IC Type: INTERFACE CIRCUIT

The interface circuit type offers communication and data transfer capabilities, enhancing the functionality of the product.

Technical Specifications

Other Function Interface ICs ONET4211LDRGETG4 attributes and parameters. Explore more Other Function Interface ICs devices from Texas Instruments

Specs

Interface IC Type:

JESD-30 Code:

S-PQCC-N24

JESD-609 Code:

e4

Length:

4 mm

Moisture Sensitivity Level (MSL):

2

No. of Functions:

1

No. of Terminals:

24

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LCC24,.16SQ,20

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Qualification:

Not Qualified

Maximum Seated Height:

1 mm

Sub-Category:

Display Drivers

Maximum Supply Voltage:

3.6 V

Minimum Supply Voltage:

3 V

Nominal Supply Voltage:

3.3 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

4 mm

Trade Compliance

ONET4211LDRGETG4 Interface ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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