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O919A14CTRGZRQ1

Texas Instruments

O919A14CTRGZRQ1 by Texas Instruments

O919A14CTRGZRQ1 by Texas Instruments is a Power Management IC with 48 terminals, operating at -40 to 105°C. It has a max output current of 7A and can handle up to 5.25V supply voltage, suitable for industrial applications requiring high switching frequency up to 2700 kHz.

Median Price

$7.767

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Texas Instruments

USA . 24,602 parts In-Stock

1+ parts

$7.767

100+ parts

$6.332

1k+ parts

$4.221

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24,602

$7.767

$6.332

$4.221

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Distributors (In-Stock)

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Digiode

USA . 1,455 parts In-Stock

1+ parts

$7.379

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1,455

$7.379

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Vyrian

USA . 2,506 parts In-Stock

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2,506

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Elcom Components

USA . 48 parts In-Stock

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48

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Parana Technologies

USA . 503 parts In-Stock

1+ parts

$2.828

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$3.315

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503

$2.828

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$3.315

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DigiPath Technology Company

USA . 1,157 parts In-Stock

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$3.113

100+ parts

$2.864

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1,157

$3.113

$2.864

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ChromeModa Solutions

Germany . 2,556 parts In-Stock

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$3.177

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$2.605

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$3.177

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IDEA Electronic Components Group

UK . 728 parts In-Stock

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$3.177

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$2.859

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728

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Corphita

USA . 3,952 parts In-Stock

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$6.990

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AZTECH Wire

Italy . 389 parts In-Stock

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$8.220

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GreenTree Electronics

Israel . 5,000 parts In-Stock

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Lixinc

USA . 542 parts In-Stock

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Overview

Unlock the power of your devices with the O919A14CTRGZRQ1 by Texas Instruments. Crafted with precision and expertise, this Power Management IC offers unparalleled quality and reliability. Ideal for a wide range of applications, this product ensures optimal performance and efficiency. Experience the value and benefits of Texas Instruments' advanced technology, providing customers with a seamless and reliable solution for their power management needs. Elevate your devices with the O919A14CTRGZRQ1 and discover the difference that quality manufacturing can make.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is durable and cost-effective, making the product suitable for a wide range of applications.

Surface Mount: YES

Allows for easy installation and integration into electronic devices.

Screening Level: AEC-Q100

Ensures high reliability and quality, making the product suitable for automotive applications.

Nominal Supply Voltage (Vsup): 3.8 V

Optimal voltage suitable for various power management tasks.

No. of Terminals: 48

Provides ample connectivity options for various input and output requirements.

Maximum Operating Temperature: 105 °C

Can withstand high operating temperatures, suitable for industrial environments.

Terminal Finish: NICKEL PALLADIUM GOLD

Provides excellent conductivity and corrosion resistance for long-term reliability.

Maximum Output Current: 7 A

Capable of delivering high output current, suitable for power-hungry applications.

No. of Outputs: 8

Multiple outputs provide flexibility in powering multiple components or systems.

Adjustable Threshold: YES

Allows for customization and fine-tuning of voltage thresholds as per specific requirements.

Technical Specifications

Power Management ICs O919A14CTRGZRQ1 attributes and parameters. Explore more Power Management ICs devices from Texas Instruments

Specs

Adjustable Threshold:

YES

JESD-30 Code:

S-PQCC-N48

JESD-609 Code:

e4

Length:

7 mm

Moisture Sensitivity Level (MSL):

3

No. of Channels:

8

No. of Functions:

1

No. of Outputs:

8

No. of Terminals:

48

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

7 A

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Screening Level:

AEC-Q100

Maximum Seated Height:

1 mm

Maximum Supply Voltage (Vsup):

5.25 V

Minimum Supply Voltage (Vsup):

3.135 V

Nominal Supply Voltage (Vsup):

3.8 V

Surface Mount:

YES

Maximum Switching Frequency:

2700 kHz

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

NO LEAD

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width (mm):

7 mm

Trade Compliance

O919A14CTRGZRQ1 Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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