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LPV542DNXR

Texas Instruments

LPV542DNXR by Texas Instruments

LPV542DNXR by Texas Instruments is a micropower operational amplifier with low-bias current and CMOS technology. It features a max input offset voltage of 4000 uV, nominal unity gain bandwidth of 7 kHz, and operates in automotive temperature grade applications.

Median Price

$1.026

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Texas Instruments

USA . 241,979 parts In-Stock

1+ parts

$1.225

100+ parts

$0.833

1k+ parts

$0.427

10k+ parts

-

241,979

$1.225

$0.833

$0.427

-

Mouser Electronics

USA . 2,772 parts In-Stock

1+ parts

$1.360

100+ parts

$1.010

1k+ parts

$0.892

10k+ parts

$0.792

2,772

$1.360

$1.010

$0.892

$0.792

Rochester

USA . 60,000 parts In-Stock

1+ parts

-

100+ parts

$0.900

1k+ parts

$0.747

10k+ parts

$0.666

60,000

-

$0.900

$0.747

$0.666

DigiKey

USA . 60,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.120

10k+ parts

-

60,000

-

-

$1.120

-

Verical

USA . 60,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.933

10k+ parts

$0.832

60,000

-

-

$0.933

$0.832

Chip1Stop

Japan . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.602

3,000

-

-

-

$0.602

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 220 parts In-Stock

1+ parts

$0.551

100+ parts

-

1k+ parts

-

10k+ parts

-

220

$0.551

-

-

-

Digiode

USA . 163 parts In-Stock

1+ parts

$0.563

100+ parts

-

1k+ parts

-

10k+ parts

-

163

$0.563

-

-

-

DigiKey Marketplace

USA . 60,000 parts In-Stock

1+ parts

-

100+ parts

$0.870

1k+ parts

-

10k+ parts

-

60,000

-

$0.870

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,660 parts In-Stock

1+ parts

$0.534

100+ parts

-

1k+ parts

-

10k+ parts

-

1,660

$0.534

-

-

-

Vigor

Singapore . 60,000 parts In-Stock

1+ parts

$0.850

100+ parts

-

1k+ parts

-

10k+ parts

-

60,000

$0.850

-

-

-

Parana Technologies

USA . 87 parts In-Stock

1+ parts

$1.792

100+ parts

-

1k+ parts

$2.352

10k+ parts

-

87

$1.792

-

$2.352

-

DigiPath Technology Company

USA . 918 parts In-Stock

1+ parts

$1.973

100+ parts

-

1k+ parts

-

10k+ parts

-

918

$1.973

-

-

-

ChromeModa Solutions

Germany . 2,784 parts In-Stock

1+ parts

$2.013

100+ parts

$1.651

1k+ parts

-

10k+ parts

-

2,784

$2.013

$1.651

-

-

IDEA Electronic Components Group

UK . 381 parts In-Stock

1+ parts

$2.013

100+ parts

-

1k+ parts

$1.812

10k+ parts

-

381

$2.013

-

$1.812

-

Overview

The LPV542DNXR by Texas Instruments is a game-changer in the world of Operational Amplifiers. With its cutting-edge technology and high-quality manufacturing, this versatile device offers unparalleled performance and reliability in a compact package. Ideal for automotive applications and other industries requiring micropower amplifiers, this product boasts a low-bias design and impressive common mode rejection ratio, making it a top choice for engineers seeking precision and efficiency. Experience the value and benefits of the LPV542DNXR today and elevate your projects to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the operational amplifier, ensuring long-term reliability and performance.

Maximum Input Offset Voltage: 4000 uV

Low input offset voltage minimizes errors in signal processing and ensures accurate amplification.

Maximum Average Bias Current (IIB): 0.000001 uA

Low bias current helps in reducing power consumption and maintaining stability in the amplifier circuit.

Surface Mount: YES

Surface mount design allows for easy and efficient installation on PCBs, saving space and simplifying assembly.

Nominal Common Mode Reject Ratio: 101 dB

High common mode rejection ratio helps in minimizing common mode noise and interference for cleaner output signals.

Nominal Supply Voltage / Vsup (V): 1.8

Low supply voltage requirement makes this operational amplifier suitable for battery-powered or low-power applications.

Maximum Operating Temperature: 125 °C

Wide operating temperature range allows for reliable performance in various environmental conditions.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the operational amplifier energy-efficient and reliable.

Technical Specifications

Operational Amplifiers (Op Amps) LPV542DNXR attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

CMOS

Total Functions:

2

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Micropower:

Yes

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

7 kHz

Nominal Common Mode Rejection Ratio (CMRR ):

101 dB

Minimum Common Mode Rejection Ratio (CMRR ):

73 dB

Input Offset Voltage Limit:

4000 uV

Minimum Voltage Gain:

35481.339

Nominal Slew Rate:

0.0037 V/us

Peak Bias Current:

1 pA

Maximum Bias Current (IIB) @25 °C:

1 pA

Operational Characteristics

Nominal Supply Voltage:

1.8 V

Maximum Supply Voltage:

6 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Reflow Peak Time Limit:

30 s

Maximum Supply Current:

1.7 μA

Physical Characteristics

Length:

0.118 in (3 mm)

Width:

0.118 in (3 mm)

Maximum Seated Height:

0.02 in (0.5 mm)

Total Terminals:

8

Terminal Pitch:

0.02 in (0.5 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel/Palladium/Gold/Silver

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Standards

JESD-30 Code:

S-PDSO-N8

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

Package Shape:

Package Style:

Small Outline, Heat Sink/Slug, Very Thin Profile

Trade Compliance

LPV542DNXR Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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