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LPV521MG

Texas Instruments

LPV521MG by Texas Instruments

LPV521MG by Texas Instruments is a CMOS operational amplifier with 120 dB CMRR and 6.1 kHz unity gain bandwidth, ideal for automotive applications. It features a max input offset voltage of 1230 uV and operates b/w -40 to 125 °C, making it suitable for precision signal conditioning in harsh environments. With a compact design and low bias current of 0.00005 uA, this op amp is surface mountable and offers reliable performance in space-constrained systems.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 5,753 parts In-Stock

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Anansix

USA . 2,074 parts In-Stock

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Digiode

USA . 898 parts In-Stock

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One Stop Electronics

USA . 1,537 parts In-Stock

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$0.410

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Parana Technologies

USA . 587 parts In-Stock

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$4.042

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$4.506

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DigiPath Technology Company

USA . 266 parts In-Stock

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$4.451

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$4.095

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$4.451

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ChromeModa Solutions

Germany . 3,249 parts In-Stock

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$4.542

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$3.724

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IDEA Electronic Components Group

UK . 2,319 parts In-Stock

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$4.542

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$4.088

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AZTECH Wire

Italy . 296 parts In-Stock

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$16.574

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Corphita

USA . 4,672 parts In-Stock

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Authorized Procurement Solutions

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Lixinc

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Overview

Unleash the power of precision with the LPV521MG by Texas Instruments. As a leader in operational amplifiers, Texas Instruments delivers unmatched quality and reliability. This versatile op amp is perfect for a wide range of applications, from automotive to industrial electronics. With ultra-low bias current and high common mode rejection ratio, the LPV521MG ensures optimal performance in any setting. Experience the value and benefits of this top-of-the-line product, designed to exceed your expectations every time.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material, suitable for various applications.

Maximum Input Offset Voltage: 1230 uV

Low offset voltage provides accurate signal processing.

Maximum Average Bias Current (IIB): 0.00005 uA

Low bias current minimizes power consumption.

Surface Mount: YES

Easy to install and suitable for compact designs.

Nominal Common Mode Reject Ratio: 120 dB

High rejection of common mode signals for improved signal fidelity.

Nominal Supply Voltage / Vsup (V): 1.8

Low supply voltage requirement for energy-efficient operation.

No. of Terminals: 5

Compact size with sufficient terminals for connectivity.

Maximum Supply Voltage Limit: 6 V

Wide supply voltage range for versatility in applications.

Maximum Operating Temperature: 125 °C

High operating temperature range for reliability in harsh environments.

Minimum Operating Temperature: -40 °C

Wide temperature range for operation in extreme conditions.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity.

Nominal Unity Gain Bandwidth: 6.1 kHz

High bandwidth for fast signal processing.

Technical Specifications

Operational Amplifiers (Op Amps) LPV521MG attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Technology:

CMOS

Total Functions:

1

Sub-Category:

Operational Amplifiers

Performance Specifications

Nominal Unity Gain Bandwidth:

6.1 kHz

Nominal Common Mode Rejection Ratio (CMRR ):

120 dB

Input Offset Voltage Limit:

1230 uV

Nominal Slew Rate:

2300 V/us

Peak Bias Current:

50 pA

Operational Characteristics

Nominal Supply Voltage:

1.8 V

Maximum Supply Voltage:

6 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Reflow Peak Time Limit:

40 s

Physical Characteristics

Length:

0.079 in (2 mm)

Width:

0.049 in (1.25 mm)

Maximum Seated Height:

0.043 in (1.1 mm)

Total Terminals:

5

Terminal Pitch:

0.026 in (0.65 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Tin Lead

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Standards

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e0

Packaging and Shipping

Package Code:

Package Shape:

Package Style:

Small Outline, Thin Profile, Shrink Pitch

Trade Compliance

LPV521MG Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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