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LPV521MGX

Texas Instruments

LPV521MGX by Texas Instruments

LPV521MGX by Texas Instruments is a CMOS Operational Amplifier with 120 dB CMRR and 6.1 kHz bandwidth. Ideal for automotive applications, it operates b/w -40 to 125 °C with a supply voltage of 1.8 V, making it suitable for low-power designs in compact spaces.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Vyrian

USA . 9,352 parts In-Stock

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Digiode

USA . 4,049 parts In-Stock

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Anansix

USA . 1,301 parts In-Stock

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Parana Technologies

USA . 868 parts In-Stock

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$5.239

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$5.856

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One Stop Electronics

USA . 1,187 parts In-Stock

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$5.410

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DigiPath Technology Company

USA . 173 parts In-Stock

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$5.768

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ChromeModa Solutions

Germany . 6,332 parts In-Stock

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$5.886

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$4.827

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IDEA Electronic Components Group

UK . 527 parts In-Stock

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$5.886

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$5.297

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AZTECH Wire

Italy . 865 parts In-Stock

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Lixinc

USA . 14,136 parts In-Stock

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Kepictronics

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Corphita

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Overview

Elevate your circuit design with the LPV521MGX operational amplifier from Texas Instruments. Crafted with precision and expertise, this high-quality op amp offers exceptional performance in a compact package. Whether you're working on automotive applications, industrial systems, or consumer electronics, this versatile component delivers reliable functionality and enhanced signal processing capabilities. Trust in Texas Instruments to provide cutting-edge technology that amplifies the value and efficiency of your projects. Upgrade to the LPV521MGX and experience the difference today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides good insulation and durability for the operational amplifier, ensuring reliable performance.

Maximum Input Offset Voltage: 1230 uV

Low maximum input offset voltage helps in minimizing errors in signal processing, making this operational amplifier suitable for precision applications.

Maximum Average Bias Current (IIB): 0.00005 uA

Low bias current ensures minimal power consumption and accurate signal amplification.

Surface Mount: YES

Surface mount capability allows for easy and space-efficient integration onto circuit boards.

Nominal Common Mode Reject Ratio: 120 dB

High common mode rejection ratio helps in rejecting noise and interference, resulting in clean output signals.

Nominal Supply Voltage / Vsup (V): 1.8

Operates at a low supply voltage, making it suitable for low-power applications.

No. of Terminals: 5

Compact design with just 5 terminals makes it ideal for space-constrained applications.

Maximum Supply Voltage Limit: 6 V

With a maximum supply voltage limit of 6V, this operational amplifier is safe to use within specified voltage ranges.

Maximum Operating Temperature: 125 °C

Wide operating temperature range allows for reliable performance in various environmental conditions.

Minimum Operating Temperature: -40 °C

Operates effectively even at low temperatures, ensuring versatility in usage.

Terminal Finish: TIN LEAD

Tin-lead finish provides good solderability and connection reliability.

Nominal Unity Gain Bandwidth: 6.1 kHz

High unity gain bandwidth ensures fast response and accurate amplification of signals.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making this operational amplifier energy-efficient and reliable.

Amplifier Type: OPERATIONAL AMPLIFIER

Designed specifically as an operational amplifier, ensuring optimized performance for signal amplification and processing.

Nominal Slow Rate: 2300 V/us

High slew rate enables the operational amplifier to respond quickly to input voltage changes, maintaining signal integrity.

Technical Specifications

Operational Amplifiers (Op Amps) LPV521MGX attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Technology:

CMOS

Total Functions:

1

Sub-Category:

Operational Amplifiers

Performance Specifications

Nominal Unity Gain Bandwidth:

6.1 kHz

Nominal Common Mode Rejection Ratio (CMRR ):

120 dB

Input Offset Voltage Limit:

1230 uV

Nominal Slew Rate:

2300 V/us

Peak Bias Current:

50 pA

Operational Characteristics

Nominal Supply Voltage:

1.8 V

Maximum Supply Voltage:

6 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Reflow Peak Time Limit:

40 s

Physical Characteristics

Length:

0.079 in (2 mm)

Width:

0.049 in (1.25 mm)

Maximum Seated Height:

0.043 in (1.1 mm)

Total Terminals:

5

Terminal Pitch:

0.026 in (0.65 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Tin Lead

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Standards

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e0

Packaging and Shipping

Package Code:

Package Shape:

Package Style:

Small Outline, Thin Profile, Shrink Pitch

Package Equivalence Code:

TSSOP5/6,.08

Trade Compliance

LPV521MGX Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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