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LPV521MGE

Texas Instruments

LPV521MGE by Texas Instruments

LPV521MGE by Texas Instruments is a CMOS Operational Amplifier with 120 dB CMRR, 6.1 kHz bandwidth, and 1230 uV max input offset voltage. Ideal for automotive applications due to its small size, low bias current of 0.00005 uA, and wide temperature range from -40 to 125 °C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,603 parts In-Stock

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4,603

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Digiode

USA . 2,481 parts In-Stock

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2,481

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Anansix

USA . 363 parts In-Stock

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363

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Distributors (Availability)

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Parana Technologies

USA . 1,639 parts In-Stock

1+ parts

$1.075

100+ parts

-

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$1.925

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1,639

$1.075

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$1.925

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DigiPath Technology Company

USA . 1,544 parts In-Stock

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$1.184

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1,544

$1.184

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ChromeModa Solutions

Germany . 2,822 parts In-Stock

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$1.208

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$0.991

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2,822

$1.208

$0.991

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IDEA Electronic Components Group

UK . 853 parts In-Stock

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$1.208

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$1.087

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853

$1.208

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$1.087

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One Stop Electronics

USA . 1,103 parts In-Stock

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$7.410

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1,103

$7.410

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AZTECH Wire

Italy . 330 parts In-Stock

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$12.160

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$12.160

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Corphita

USA . 2,840 parts In-Stock

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2,840

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Overview

Discover Texas Instruments' LPV521MGE, a top-quality operational amplifier designed to provide precision and efficiency in a compact package. Perfect for automotive applications, this versatile op amp offers exceptional performance with minimal power consumption. With a wide operating temperature range and high common mode rejection ratio, the LPV521MGE is ideal for demanding environments where reliability is key. Trust Texas Instruments to deliver cutting-edge technology that meets your needs for superior functionality and value. Elevate your projects with the LPV521MGE and experience the difference of industry-leading innovation.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the operational amplifier, ensuring reliable performance.

Maximum Input Offset Voltage: 1230 uV

Low input offset voltage helps minimize errors in signal processing applications, leading to accurate outputs.

Maximum Average Bias Current (IIB): 0.00005 uA

Ultra-low bias current ensures minimal power consumption and enables the amplifier to operate efficiently.

Surface Mount: YES

Surface mount capability allows for easy installation on circuit boards, saving space and simplifying manufacturing processes.

Nominal Common Mode Reject Ratio: 120 dB

High common mode rejection ratio helps eliminate interference from common signal components, resulting in cleaner output signals.

Nominal Supply Voltage / Vsup (V): 1.8

Low supply voltage requirement makes this operational amplifier suitable for low power applications and portable electronic devices.

No. of Terminals: 5

Simple and straightforward terminal configuration makes it easy to integrate the operational amplifier into circuit designs.

Maximum Supply Voltage Limit: 6 V

Wide supply voltage range offers flexibility in various system designs while ensuring the safety of the amplifier's operation.

Maximum Operating Temperature: 125 °C

High operating temperature range allows for reliable performance in harsh environments or industrial applications.

Technology: CMOS

CMOS technology provides high-speed performance, low power consumption, and immunity to noise, making this operational amplifier ideal for precision applications.

Technical Specifications

Operational Amplifiers (Op Amps) LPV521MGE attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Technology:

CMOS

Total Functions:

1

Sub-Category:

Operational Amplifiers

Performance Specifications

Nominal Unity Gain Bandwidth:

6.1 kHz

Nominal Common Mode Rejection Ratio (CMRR ):

120 dB

Input Offset Voltage Limit:

1230 uV

Nominal Slew Rate:

2300 V/us

Peak Bias Current:

50 pA

Operational Characteristics

Nominal Supply Voltage:

1.8 V

Maximum Supply Voltage:

6 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Reflow Peak Time Limit:

40 s

Physical Characteristics

Length:

0.079 in (2 mm)

Width:

0.049 in (1.25 mm)

Maximum Seated Height:

0.043 in (1.1 mm)

Total Terminals:

5

Terminal Pitch:

0.026 in (0.65 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Matte Tin

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Standards

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e3

Packaging and Shipping

Package Code:

Package Shape:

Package Style:

Small Outline, Thin Profile, Shrink Pitch

Trade Compliance

LPV521MGE Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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