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LPV358DRG4

Texas Instruments

LPV358DRG4 by Texas Instruments

LPV358DRG4 by Texas Instruments is a dual operational amplifier with 10000 uV max input offset voltage, 0.06 uA max average bias current, and 71 dB nominal CMRR. Ideal for industrial applications requiring low power consumption and high precision signal amplification in a compact package.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 9,730 parts In-Stock

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Digiode

USA . 1,797 parts In-Stock

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Pegasus Components GmbH

Germany . 191 parts In-Stock

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Distributors (Availability)

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Parana Technologies

USA . 180 parts In-Stock

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$6.344

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$7.096

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180

$6.344

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$7.096

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ChromeModa Solutions

Germany . 3,530 parts In-Stock

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$7.128

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$5.845

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$5.845

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IDEA Electronic Components Group

UK . 1,261 parts In-Stock

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$7.128

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$6.415

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One Stop Electronics

USA . 335 parts In-Stock

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$8.410

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335

$8.410

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AZTECH Wire

Italy . 239 parts In-Stock

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$16.685

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Component Stockers USA

USA . 599 parts In-Stock

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$99.990

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Corphita

USA . 2,581 parts In-Stock

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DigiPath Technology Company

USA . 1,722 parts In-Stock

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Microchip USA

USA . 172 parts In-Stock

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Overview

Upgrade your electronic designs with the LPV358DRG4 by Texas Instruments. As a leader in the industry, Texas Instruments delivers top-quality operational amplifiers like the LPV358DRG4 that are perfect for a wide range of applications. With low power consumption and high performance, this op amp offers exceptional value to customers looking for reliable and efficient solutions. Whether you're designing consumer electronics, industrial automation systems, or automotive applications, the LPV358DRG4 is the ideal choice for your project. Trust Texas Instruments for superior products that meet your needs and exceed your expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protects the internal components of the operational amplifier, ensuring long-term reliability.

Maximum Input Offset Voltage: 10000 uV

Low input offset voltage ensures accurate signal processing and minimal error in amplification.

Maximum Average Bias Current (IIB): 0.06 uA

Low bias current helps in reducing power consumption and improving overall efficiency.

Surface Mount: YES

Allows for easy and compact integration onto circuit boards, saving space and simplifying assembly.

Nominal Common Mode Reject Ratio: 71 dB

High common mode rejection ratio ensures better rejection of noise and interference for cleaner output signals.

Nominal Supply Voltage / Vsup (V): 5

Suitable for use with a 5V power supply, making it compatible with standard electronic systems.

Maximum Operating Temperature: 85 °C

Can withstand high operating temperatures, making it suitable for industrial applications where temperature fluctuations may occur.

Technology: BIPOLAR

Bipolar technology ensures high precision and low noise operation, making it ideal for sensitive signal processing applications.

Technical Specifications

Operational Amplifiers (Op Amps) LPV358DRG4 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

BIPOLAR

Power Supply:

2.7/5 V

Total Functions:

2

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

No

Low-Offset:

No

Micropower:

Yes

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

237 kHz

Nominal Common Mode Rejection Ratio (CMRR ):

71 dB

Input Offset Voltage Limit:

10000 uV

Minimum Voltage Gain:

10000

Nominal Slew Rate:

0.1 V/us

Peak Bias Current:

60 nA

Maximum Bias Current (IIB) @25 °C:

50 nA

Operational Characteristics

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

5.5 V

Maximum Negative Supply Voltage:

0 V

Minimum Negative Supply Voltage:

0 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

85 °C (185 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Reflow Peak Time Limit:

30 s

Maximum Supply Current:

24 μA

Physical Characteristics

Length:

0.193 in (4.9 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

8

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

SOP8,.25

Trade Compliance

LPV358DRG4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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