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LPV321IDBVT

Texas Instruments

LPV321IDBVT by Texas Instruments

LPV321IDBVT by Texas Instruments is a micropower operational amplifier with a max input offset voltage of 11000 uV and a nominal common mode reject ratio of 71 dB. With a package style of small outline, low profile, shrink pitch, it is ideal for automotive applications requiring high precision and low power consumption. The op amp operates within a temperature range of -40 to 125 °C and has a unity gain bandwidth of 237 kHz.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,030 parts In-Stock

1+ parts

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5,030

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Digiode

USA . 1,043 parts In-Stock

1+ parts

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1,043

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 2,292 parts In-Stock

1+ parts

$1.616

100+ parts

-

1k+ parts

$2.240

10k+ parts

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2,292

$1.616

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$2.240

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DigiPath Technology Company

USA . 286 parts In-Stock

1+ parts

$1.780

100+ parts

$1.637

1k+ parts

-

10k+ parts

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286

$1.780

$1.637

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ChromeModa Solutions

Germany . 5,178 parts In-Stock

1+ parts

$1.816

100+ parts

$1.489

1k+ parts

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5,178

$1.816

$1.489

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IDEA Electronic Components Group

UK . 1,455 parts In-Stock

1+ parts

$1.816

100+ parts

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1k+ parts

$1.634

10k+ parts

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1,455

$1.816

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$1.634

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One Stop Electronics

USA . 1,039 parts In-Stock

1+ parts

$4.410

100+ parts

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1,039

$4.410

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AZTECH Wire

Italy . 567 parts In-Stock

1+ parts

$7.168

100+ parts

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567

$7.168

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A-Z Elektronik GmbH

Germany . 13,500 parts In-Stock

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13,500

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Corphita

USA . 2,209 parts In-Stock

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2,209

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Overview

Enhance your projects with the LPV321IDBVT by Texas Instruments, a top-quality operational amplifier designed to deliver unmatched performance and reliability. From automotive applications to consumer electronics, this compact and efficient component offers a wide range of benefits, including low power consumption, high voltage gain, and excellent common mode rejection ratio. Trust in Texas Instruments' reputation for excellence and choose the LPV321IDBVT for all your operational amplifier needs. Elevate your designs and experience superior results with this cutting-edge product.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components, ensuring a long lifespan for the product.

Maximum Input Offset Voltage: 11000 uV

Low input offset voltage ensures accurate and precise output signal, making this op amp suitable for sensitive applications.

Nominal Supply Voltage / Vsup (V): 5

Operates at a standard supply voltage of 5V, making it compatible with many common electronic circuits.

Frequency Compensation: YES

The internal frequency compensation helps stabilize the Op Amp's performance, ensuring consistent operation over a wide range of frequencies.

Maximum Negative Supply Voltage Limit: 0 V

With a low negative supply voltage limit, this Op Amp is suitable for single supply applications where a negative voltage is not required.

Technical Specifications

Operational Amplifiers (Op Amps) LPV321IDBVT attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

BIPOLAR

Power Supply:

2.7/5 V

Total Functions:

1

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

No

Low-Offset:

No

Micropower:

Yes

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

237 kHz

Nominal Common Mode Rejection Ratio (CMRR ):

71 dB

Input Offset Voltage Limit:

11000 uV

Minimum Voltage Gain:

10000

Nominal Slew Rate:

0.1 V/us

Peak Bias Current:

65 nA

Maximum Bias Current (IIB) @25 °C:

50 nA

Operational Characteristics

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

5.5 V

Maximum Negative Supply Voltage:

0 V

Minimum Negative Supply Voltage:

0 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Maximum Supply Current:

40 μA

Physical Characteristics

Length:

0.114 in (2.9 mm)

Width:

0.063 in (1.6 mm)

Maximum Seated Height:

0.057 in (1.45 mm)

Total Terminals:

5

Terminal Pitch:

0.037 in (0.95 mm)

Terminal Position:

Dual

Terminal Form:

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G5

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

Package Shape:

Package Style:

Small Outline, Low Profile, Shrink Pitch

Package Equivalence Code:

TSOP5/6,.11,37

Trade Compliance

LPV321IDBVT Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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