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LPV321DCKRE4

Texas Instruments

LPV321DCKRE4 by Texas Instruments

LPV321DCKRE4 by Texas Instruments is an Operational Amplifier with a max input offset voltage of 10000 uV and a nominal voltage of 5 V. It features micropower technology, making it suitable for industrial applications requiring low power consumption. With a unity gain bandwidth of 237 kHz, this Op Amp is ideal for precision signal processing in compact electronic devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 7,926 parts In-Stock

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Digiode

USA . 4,835 parts In-Stock

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One Stop Electronics

USA . 312 parts In-Stock

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$4.410

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312

$4.410

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Parana Technologies

USA . 2,350 parts In-Stock

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$5.839

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$6.623

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$5.839

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$6.623

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IDEA Electronic Components Group

UK . 1,186 parts In-Stock

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$6.561

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$5.905

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$6.561

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$5.905

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ChromeModa Solutions

Germany . 207 parts In-Stock

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$6.561

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$5.380

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207

$6.561

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AZTECH Wire

Italy . 479 parts In-Stock

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$15.194

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A-Z Elektronik GmbH

Germany . 9,100 parts In-Stock

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DigiPath Technology Company

USA . 2,363 parts In-Stock

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$5.915

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Corphita

USA . 2,255 parts In-Stock

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Microchip USA

USA . 476 parts In-Stock

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Overview

Enhance your electronic designs with the LPV321DCKRE4 by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments delivers top-quality operational amplifiers that excel in a variety of applications. This versatile Op Amp offers customers exceptional value with its micropower technology, wide temperature range, and precise voltage feedback architecture. Experience superior performance and reliability with the LPV321DCKRE4, perfect for industrial-grade projects where precision and efficiency are paramount. Trust Texas Instruments to provide you with the innovative solutions you need for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy package material provides durability and protection, making the operational amplifier suitable for various environments.

Maximum Input Offset Voltage: 10000 uV

Low input offset voltage ensures precise and accurate signal processing, leading to improved performance.

Maximum Average Bias Current (IIB): 0.06 uA

Low bias current helps in minimizing power consumption and improving efficiency of the operational amplifier.

Surface Mount: YES

Surface mount capability allows for easy and convenient integration into circuit boards, saving space and simplifying assembly.

Nominal Common Mode Reject Ratio: 71 dB

High common mode rejection ratio ensures effective suppression of unwanted signals, resulting in cleaner output signals.

Nominal Supply Voltage / Vsup (V): 5

Suitable supply voltage range of 5V makes the operational amplifier compatible with a wide range of applications and power sources.

Minimum Operating Temperature: -40 °C

Wide operating temperature range allows the operational amplifier to function reliably in various temperature conditions.

Amplifier Type: OPERATIONAL AMPLIFIER

Being specifically designed as an operational amplifier, this product offers precise amplification for a range of signal processing applications.

Technical Specifications

Operational Amplifiers (Op Amps) LPV321DCKRE4 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

BIPOLAR

Power Supply:

2.7/5 V

Total Functions:

1

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

No

Low-Offset:

No

Micropower:

Yes

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

237 kHz

Nominal Common Mode Rejection Ratio (CMRR ):

71 dB

Input Offset Voltage Limit:

10000 uV

Minimum Voltage Gain:

10000

Nominal Slew Rate:

0.1 V/us

Peak Bias Current:

60 nA

Maximum Bias Current (IIB) @25 °C:

50 nA

Operational Characteristics

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

5.5 V

Maximum Negative Supply Voltage:

0 V

Minimum Negative Supply Voltage:

0 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

85 °C (185 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Reflow Peak Time Limit:

30 s

Maximum Supply Current:

15 μA

Physical Characteristics

Length:

0.079 in (2 mm)

Width:

0.049 in (1.25 mm)

Maximum Seated Height:

0.043 in (1.1 mm)

Total Terminals:

5

Terminal Pitch:

0.026 in (0.65 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

Package Shape:

Package Style:

Small Outline, Thin Profile, Shrink Pitch

Package Equivalence Code:

TSSOP5/6,.08

Trade Compliance

LPV321DCKRE4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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