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LPV321IDBVRG4

Texas Instruments

LPV321IDBVRG4 by Texas Instruments

LPV321IDBVRG4 by Texas Instruments is an Operational Amplifier with a max input offset voltage of 11000 uV, bias current of 0.065 uA, and common mode reject ratio of 71 dB. Ideal for automotive applications, it operates at temperatures ranging from -40 to 125 °C and has a unity gain bandwidth of 237 kHz.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 8,235 parts In-Stock

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Digiode

USA . 4,319 parts In-Stock

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4,319

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Distributors (Availability)

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One Stop Electronics

USA . 1,283 parts In-Stock

1+ parts

$3.410

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$3.410

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Parana Technologies

USA . 461 parts In-Stock

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$5.383

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$6.066

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461

$5.383

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$6.066

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IDEA Electronic Components Group

UK . 2,025 parts In-Stock

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$6.048

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$5.443

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$6.048

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$5.443

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ChromeModa Solutions

Germany . 1,445 parts In-Stock

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$6.048

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$4.959

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$6.048

$4.959

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AZTECH Wire

Italy . 689 parts In-Stock

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$14.243

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689

$14.243

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Component Stockers USA

USA . 623 parts In-Stock

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$99.990

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623

$99.990

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A-Z Elektronik GmbH

Germany . 6,635 parts In-Stock

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Corphita

USA . 4,381 parts In-Stock

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Alle Elektronik GmbH

Germany . 4,090 parts In-Stock

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DigiPath Technology Company

USA . 1,644 parts In-Stock

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$5.453

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Kepictronics

USA . 500 parts In-Stock

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Microchip USA

USA . 403 parts In-Stock

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Overview

Unlock the power of precision with the LPV321IDBVRG4 by Texas Instruments. As a leader in operational amplifiers, Texas Instruments delivers exceptional quality and reliability. This versatile product is perfect for a wide range of applications, providing high performance and accuracy. With its low power consumption and compact design, the LPV321IDBVRG4 offers great value and convenience to customers. Experience the difference with Texas Instruments and elevate your projects to new heights with this top-notch operational amplifier.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the operational amplifier, making it suitable for a variety of applications.

Maximum Input Offset Voltage: 11000 uV

Low input offset voltage helps in minimizing errors in signal processing, making this operational amplifier precise and accurate.

Maximum Average Bias Current (IIB): 0.065 uA

Low bias current ensures minimal power consumption and maintains stability in the amplifier circuit.

Nominal Common Mode Reject Ratio: 71 dB

High common mode rejection ratio allows the amplifier to effectively reject noise and interference, resulting in clean output signals.

Nominal Supply Voltage / Vsup (V): 5

Operates at a standard supply voltage of 5V, making it compatible with common power sources and easy to integrate into existing systems.

Temperature Grade: AUTOMOTIVE

Suitable for automotive applications where the operational amplifier may be exposed to varying temperatures and harsh environments.

Nominal Unity Gain Bandwidth: 237 kHz

High unity gain bandwidth allows the operational amplifier to handle high-frequency signals efficiently, making it suitable for audio and other high-speed applications.

Technology: BIPOLAR

Bipolar technology offers good linearity and low noise performance, making this operational amplifier ideal for precision applications.

Amplifier Type: OPERATIONAL AMPLIFIER

The specific design as an operational amplifier ensures reliable and stable performance in a wide range of signal processing tasks.

Technical Specifications

Operational Amplifiers (Op Amps) LPV321IDBVRG4 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

BIPOLAR

Power Supply:

2.7/5 V

Total Functions:

1

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

No

Low-Offset:

No

Micropower:

Yes

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

237 kHz

Nominal Common Mode Rejection Ratio (CMRR ):

71 dB

Input Offset Voltage Limit:

11000 uV

Minimum Voltage Gain:

10000

Nominal Slew Rate:

0.1 V/us

Peak Bias Current:

65 nA

Maximum Bias Current (IIB) @25 °C:

50 nA

Operational Characteristics

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

5.5 V

Maximum Negative Supply Voltage:

0 V

Minimum Negative Supply Voltage:

0 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Reflow Peak Time Limit:

30 s

Maximum Supply Current:

40 μA

Physical Characteristics

Length:

0.114 in (2.9 mm)

Width:

0.063 in (1.6 mm)

Maximum Seated Height:

0.057 in (1.45 mm)

Total Terminals:

5

Terminal Pitch:

0.037 in (0.95 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

Package Shape:

Package Style:

Small Outline, Low Profile, Shrink Pitch

Package Equivalence Code:

TSOP5/6,.11,37

Trade Compliance

LPV321IDBVRG4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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