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LMH6612MAE

Texas Instruments

LMH6612MAE by Texas Instruments

LMH6612MAE by Texas Instruments is a video amplifier with 2 channels and a nominal bandwidth of 345 kHz. It operates b/w -40 to 125 °C, suitable for automotive applications. This small outline IC has a supply voltage range from 2.7V to 11V, making it ideal for audio and video amplification in compact devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,398 parts In-Stock

1+ parts

-

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6,398

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Digiode

USA . 2,148 parts In-Stock

1+ parts

-

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2,148

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Anansix

USA . 1,175 parts In-Stock

1+ parts

-

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1,175

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,724 parts In-Stock

1+ parts

$1.910

100+ parts

-

1k+ parts

$2.448

10k+ parts

-

1,724

$1.910

-

$2.448

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DigiPath Technology Company

USA . 239 parts In-Stock

1+ parts

$2.103

100+ parts

-

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-

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239

$2.103

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ChromeModa Solutions

Germany . 6,911 parts In-Stock

1+ parts

$2.146

100+ parts

$1.760

1k+ parts

-

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6,911

$2.146

$1.760

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IDEA Electronic Components Group

UK . 1,892 parts In-Stock

1+ parts

$2.146

100+ parts

-

1k+ parts

$1.931

10k+ parts

-

1,892

$2.146

-

$1.931

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AZTECH Wire

Italy . 375 parts In-Stock

1+ parts

$7.021

100+ parts

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375

$7.021

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One Stop Electronics

USA . 392 parts In-Stock

1+ parts

$21.800

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-

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392

$21.800

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Corphita

USA . 1,021 parts In-Stock

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-

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1,021

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Overview

Experience superior audio and video amplification with the LMH6612MAE by Texas Instruments. With a reputation for high-quality products, Texas Instruments delivers exceptional performance and reliability in every component. The LMH6612MAE is perfect for a wide range of applications in the audio and video amplifier category, providing customers with unparalleled value and benefits. Upgrade your system with the LMH6612MAE and enjoy top-of-the-line amplification for all your audio and video needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides durability and protects the internal components of the amplifier, ensuring a longer lifespan.

Surface Mount: YES

Being surface mountable makes installation easier and more convenient, especially in compact spaces.

Minimum Operating Temperature: -40 °C

With a minimum operating temperature of -40 °C, this amplifier can operate effectively even in extremely cold environments.

Technology: BIPOLAR

The bipolar technology used in this amplifier ensures high-quality audio and video output, making it a reliable choice for various applications.

Nominal Bandwidth: 345 kHz

With a wide nominal bandwidth of 345 kHz, this amplifier can handle a range of audio and video signals with high clarity and fidelity.

Technical Specifications

Audio & Video Amplifiers LMH6612MAE attributes and parameters. Explore more Audio & Video Amplifiers devices from Texas Instruments

Specs

Nominal Bandwidth:

345 kHz

General IC Type:

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e0

Length:

4.9 mm

Moisture Sensitivity Level (MSL):

1

No. of Channels:

2

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Qualification:

Not Qualified

Maximum Supply Voltage (Vsup):

11 V

Minimum Supply Voltage (Vsup):

2.7 V

Surface Mount:

YES

Technology:

BIPOLAR

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

3.9 mm

Trade Compliance

LMH6612MAE General Purpose ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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