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LM5050MK-1

Texas Instruments

LM5050MK-1 by Texas Instruments

LM5050MK-1 by Texas Instruments is a MOSFET gate driver with a max supply voltage of 75V and min of 5V. It features a small outline package style, suitable for automotive applications. With high side driver capability, it operates b/w -40 to 125°C temperature range.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 6,313 parts In-Stock

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6,313

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Digiode

USA . 4,890 parts In-Stock

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4,890

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Anansix

USA . 1,965 parts In-Stock

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1,965

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Cyclops Electronics Ltd

UK . 310 parts In-Stock

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310

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Parana Technologies

USA . 1,679 parts In-Stock

1+ parts

$2.999

100+ parts

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$3.505

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1,679

$2.999

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$3.505

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DigiPath Technology Company

USA . 1,970 parts In-Stock

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$3.303

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1,970

$3.303

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ChromeModa Solutions

Germany . 6,448 parts In-Stock

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$3.370

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$2.763

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$3.370

$2.763

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IDEA Electronic Components Group

UK . 1,475 parts In-Stock

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$3.370

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$3.033

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$3.370

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$3.033

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AZTECH Wire

Italy . 285 parts In-Stock

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$8.014

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285

$8.014

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One Stop Electronics

USA . 1,178 parts In-Stock

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$28.500

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1,178

$28.500

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Authorized Procurement Solutions

USA . 212,000 parts In-Stock

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Lixinc

USA . 14,183 parts In-Stock

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A-Z Elektronik GmbH

Germany . 4,976 parts In-Stock

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Corphita

USA . 4,617 parts In-Stock

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Alle Elektronik GmbH

Germany . 3,317 parts In-Stock

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S.R.D Solutions

India . 3,000 parts In-Stock

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Kepictronics

USA . 1,000 parts In-Stock

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1,000

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GreenTree Electronics

Israel . 310 parts In-Stock

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310

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Overview

Unleash the power of your electronic designs with the LM5050MK-1 by Texas Instruments. Crafted with precision and expertise, this MOSFET Gate Driver offers unparalleled quality and reliability. Ideal for automotive applications, this small outline driver provides high side control with ease. Experience the benefits of a maximum supply voltage of 75V and a nominal supply voltage of 12V, ensuring optimal performance in any scenario. Trust Texas Instruments to deliver cutting-edge technology that exceeds expectations. Elevate your projects today with the LM5050MK-1.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the package lightweight and durable, allowing for easy handling and reliable performance.

Surface Mount: YES

Being surface mountable, this product can be easily integrated onto circuit boards, saving space and simplifying the assembly process.

Maximum Supply Voltage: 75 V

With a high maximum supply voltage, this gate driver can accommodate a wide range of applications without the risk of damage due to voltage spikes.

Package Shape: RECTANGULAR

The rectangular package shape allows for efficient placement and orientation on the circuit board, optimizing space utilization.

No. of Terminals: 6

Having 6 terminals provides flexibility in connecting external components and peripherals, enabling customization and compatibility with various setups.

Package Style (Meter): SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH

The small outline, thin profile, and shrink pitch design of the package contribute to a compact footprint, making it suitable for space-constrained applications.

Minimum Supply Voltage: 5 V

The low minimum supply voltage allows for operation in low-power scenarios, increasing efficiency and reducing energy consumption.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this gate driver can withstand elevated temperatures without compromising performance, ensuring reliability in challenging environmental conditions.

Minimum Operating Temperature: -40 °C

The wide operating temperature range enables operation in extreme cold conditions, providing versatility and stability across different temperature environments.

Terminal Position: DUAL

The dual terminal position offers redundancy and improved connectivity, reducing the risk of signal loss or disconnection for enhanced reliability.

Maximum Seated Height: 1 mm

The low seated height facilitates a compact design, allowing for close stacking of components and efficient use of space on the circuit board.

Width: 1.65 mm

The narrow width of the gate driver contributes to a slim profile, enabling seamless integration in tight spaces and crowded PCB layouts.

High Side Driver: YES

Featuring a high side driver capability, this gate driver can effectively control power devices connected to the high-side of the circuit, offering versatile control options.

Length: 2.97 mm

The compact length of the gate driver enhances its overall space efficiency, allowing for easy placement and routing of traces on the PCB.

Temperature Grade: AUTOMOTIVE

Designed for automotive applications, this gate driver meets stringent quality and reliability standards to ensure optimal performance in automotive environments.

Terminal Form: GULL WING

The gull wing terminal form provides secure solder joints and enhanced mechanical strength, reducing the risk of solder fractures and ensuring robust electrical connections.

Nominal Supply Voltage: 12 V

The nominal supply voltage of 12 V offers compatibility with standard power sources, making integration and operation straightforward in various electronic systems.

Terminal Pitch: 0.95 mm

With a narrow terminal pitch, this gate driver supports high-density mounting, allowing for compact layouts and efficient use of PCB real estate.

Interface IC Type: HALF BRIDGE BASED MOSFET DRIVER

The half-bridge based MOSFET driver interface IC type offers precise control and efficient operation of MOSFET devices, enhancing the performance and functionality of the gate driver.

Technical Specifications

MOSFET Gate Drivers LM5050MK-1 attributes and parameters. Explore more MOSFET Gate Drivers devices from Texas Instruments

Specs

High Side Driver:

YES

Interface IC Type:

JESD-30 Code:

R-PDSO-G6

Length:

2.97 mm

No. of Functions:

1

No. of Terminals:

6

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH

Qualification:

Not Qualified

Maximum Seated Height:

1 mm

Maximum Supply Voltage:

75 V

Minimum Supply Voltage:

5 V

Nominal Supply Voltage:

12 V

Surface Mount:

YES

Temperature Grade:

Terminal Form:

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Width:

1.65 mm

Trade Compliance

LM5050MK-1 Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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