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LM5050MK-2

Texas Instruments

LM5050MK-2 by Texas Instruments

LM5050MK-2 by Texas Instruments is a MOSFET gate driver with a max supply voltage of 75V and min of 6V. With a small outline package style, it operates in automotive-grade temperatures from -40 to 125°C. Ideal for half-bridge based applications, this driver has dual terminals and gull wing form factor.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,145 parts In-Stock

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7,145

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Digiode

USA . 2,910 parts In-Stock

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2,910

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Distributors (Availability)

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Parana Technologies

USA . 236 parts In-Stock

1+ parts

$13.337

100+ parts

-

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$13.849

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236

$13.337

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$13.849

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DigiPath Technology Company

USA . 273 parts In-Stock

1+ parts

$14.685

100+ parts

$13.510

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273

$14.685

$13.510

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IDEA Electronic Components Group

UK . 344 parts In-Stock

1+ parts

$14.985

100+ parts

$14.236

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$13.486

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344

$14.985

$14.236

$13.486

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ChromeModa Solutions

Germany . 191 parts In-Stock

1+ parts

$14.985

100+ parts

$12.288

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191

$14.985

$12.288

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AZTECH Wire

Italy . 673 parts In-Stock

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$16.243

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673

$16.243

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One Stop Electronics

USA . 288 parts In-Stock

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$50.500

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288

$50.500

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Lixinc

USA . 14,640 parts In-Stock

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Corphita

USA . 4,237 parts In-Stock

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Alle Elektronik GmbH

Germany . 3,298 parts In-Stock

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3,298

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A-Z Elektronik GmbH

Germany . 2,046 parts In-Stock

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2,046

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Kepictronics

USA . 2,000 parts In-Stock

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Perfect Parts

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Overview

Unlock the power of precision with the LM5050MK-2 by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments delivers unparalleled quality in MOSFET Gate Drivers. Ideal for automotive applications, this small outline, very thin profile driver offers a wide supply voltage range and high side driver capability. Experience seamless performance and reliability with the LM5050MK-2, providing customers with the value, benefits, and advantages they need for their projects. Drive innovation with Texas Instruments today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the package durable and resistant to heat, ensuring reliability in various applications.

Surface Mount: YES

Being surface-mountable allows for easy and efficient installation on PCBs, saving space and simplifying assembly processes.

Maximum Supply Voltage: 75 V

With a high maximum supply voltage, this MOSFET gate driver can handle a wide range of voltage requirements, making it versatile.

Package Shape: RECTANGULAR

The rectangular shape of the package provides a compact form factor, optimizing board space and enabling efficient PCB layout designs.

No. of Terminals: 6

Having 6 terminals allows for proper connectivity and control of the MOSFETs, ensuring stable and smooth operation of the gate driver.

Minimum Supply Voltage: 6 V

The low minimum supply voltage requirement allows for operation in low-power applications, providing energy efficiency and flexibility.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature tolerance ensures reliability in harsh environments and under demanding conditions.

Minimum Operating Temperature: -40 °C

The wide range of operating temperatures allows for use in both hot and cold climates, making it suitable for diverse applications.

Terminal Position: DUAL

Having dual terminal positions enables versatile connection options and flexibility in circuit configurations for different requirements.

Maximum Seated Height: 1 mm

The low seated height makes the package slim and compact, ideal for applications where space constraints are a concern.

Width: 1.65 mm

The narrow width of the package helps in optimizing board space and allows for denser component placement on the PCB.

High Side Driver: YES

The inclusion of a high-side driver simplifies the driving of power MOSFETs in high-side switching configurations, enhancing the overall efficiency of the system.

Length: 2.97 mm

The compact length of the package contributes to space-saving and efficient board layout designs, especially in applications with size constraints.

Temperature Grade: AUTOMOTIVE

Being automotive-grade ensures the gate driver's reliability and robustness in automotive applications, where temperature and environmental conditions can vary.

Terminal Form: GULL WING

The gull-wing terminals provide secure mechanical connections and facilitate easier soldering during assembly, enhancing the overall reliability of the connections.

Nominal Supply Voltage: 12 V

The 12V nominal supply voltage makes this gate driver compatible with standard power supply systems, offering ease of integration into existing circuits.

Terminal Pitch: 0.95 mm

The small terminal pitch enables higher density integration on the PCB, allowing for more compact and efficient circuit designs.

Interface IC Type: HALF BRIDGE BASED MOSFET DRIVER

The half-bridge based MOSFET driver design offers efficient and reliable control of MOSFETs in half-bridge configurations, making it suitable for various power applications.

Technical Specifications

MOSFET Gate Drivers LM5050MK-2 attributes and parameters. Explore more MOSFET Gate Drivers devices from Texas Instruments

Specs

High Side Driver:

YES

Interface IC Type:

JESD-30 Code:

R-PDSO-G6

Length:

2.97 mm

No. of Functions:

1

No. of Terminals:

6

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH

Maximum Seated Height:

1 mm

Maximum Supply Voltage:

75 V

Minimum Supply Voltage:

6 V

Nominal Supply Voltage:

12 V

Surface Mount:

YES

Temperature Grade:

Terminal Form:

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Width:

1.65 mm

Trade Compliance

LM5050MK-2 Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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