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LM25101CSD/NOPB

Texas Instruments

LM25101CSD/NOPB by Texas Instruments

LM25101CSD/NOPB by Texas Instruments is a MOSFET gate driver with 2 channels, 3A max output current, and 12V nominal voltage. It operates in automotive-grade temperatures (-40 to 125°C) and features a small outline package for space-constrained applications. Ideal for driving high-side MOSFETs in automotive electronics.

Median Price

$2.764

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Texas Instruments

USA . 19,950 parts In-Stock

1+ parts

$3.600

100+ parts

$3.154

1k+ parts

$1.782

10k+ parts

-

19,950

$3.600

$3.154

$1.782

-

Rochester

USA . 1,346 parts In-Stock

1+ parts

-

100+ parts

$2.270

1k+ parts

$2.030

10k+ parts

$1.910

1,346

-

$2.270

$2.030

$1.910

DigiKey

USA . 1,346 parts In-Stock

1+ parts

-

100+ parts

$2.990

1k+ parts

-

10k+ parts

-

1,346

-

$2.990

-

-

Verical

USA . 1,346 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$2.538

10k+ parts

$2.388

1,346

-

-

$2.538

$2.388

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,904 parts In-Stock

1+ parts

$2.356

100+ parts

-

1k+ parts

-

10k+ parts

-

2,904

$2.356

-

-

-

Vyrian

USA . 6,006 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,006

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 2,919 parts In-Stock

1+ parts

$2.232

100+ parts

-

1k+ parts

-

10k+ parts

-

2,919

$2.232

-

-

-

Parana Technologies

USA . 148 parts In-Stock

1+ parts

$10.310

100+ parts

-

1k+ parts

$10.834

10k+ parts

-

148

$10.310

-

$10.834

-

DigiPath Technology Company

USA . 1,828 parts In-Stock

1+ parts

$11.352

100+ parts

-

1k+ parts

-

10k+ parts

-

1,828

$11.352

-

-

-

IDEA Electronic Components Group

UK . 1,398 parts In-Stock

1+ parts

$11.584

100+ parts

$11.005

1k+ parts

$10.426

10k+ parts

-

1,398

$11.584

$11.005

$10.426

-

ChromeModa Solutions

Germany . 160 parts In-Stock

1+ parts

$11.584

100+ parts

$9.499

1k+ parts

-

10k+ parts

-

160

$11.584

$9.499

-

-

Microchip USA

USA . 1,080 parts In-Stock

1+ parts

$26.950

100+ parts

$26.790

1k+ parts

$26.710

10k+ parts

$26.620

1,080

$26.950

$26.790

$26.710

$26.620

Overview

Elevate your power management solutions with the LM25101CSD/NOPB MOSFET Gate Driver by Texas Instruments. With a reputation for excellence in manufacturing, Texas Instruments delivers top-quality products that are trusted by industry professionals worldwide. This compact and efficient driver is perfect for a wide range of applications, offering precise control and reliable performance. Experience the value and benefits of this high-quality product, designed to optimize your system's efficiency and effectiveness. Trust Texas Instruments to provide you with the tools you need to succeed in today's competitive market.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used in the package body provides durability and protection for the internal components, making this product reliable for long-term use.

Surface Mount: YES

Being surface mountable allows for easy and efficient installation of the MOSFET gate driver onto circuit boards, saving time and effort during assembly.

Maximum Supply Voltage: 14 V

With a high maximum supply voltage of 14V, this MOSFET gate driver can handle a wide range of input voltages, providing flexibility in various applications.

Power Supplies (V): 12

The 12V power supply ensures compatibility with standard power sources, making integration into existing systems seamless.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature of 125°C allows the MOSFET gate driver to operate in demanding conditions without risk of overheating or malfunction.

Temperature Grade: AUTOMOTIVE

Designed for automotive applications, this MOSFET gate driver meets the stringent requirements for temperature and performance in vehicle systems.

Maximum Output Current: 3 A

The high maximum output current of 3A ensures sufficient power delivery for driving MOSFETs in high-performance applications, resulting in optimized efficiency and reliability.

No. of Channels: 2

Having 2 channels allows the gate driver to control multiple MOSFETs independently, enabling more complex circuit configurations and enhancing overall system functionality.

Technical Specifications

MOSFET Gate Drivers LM25101CSD/NOPB attributes and parameters. Explore more MOSFET Gate Drivers devices from Texas Instruments

Specs

High Side Driver:

YES

Interface IC Type:

JESD-30 Code:

S-PDSO-N10

JESD-609 Code:

e3

Length:

4 mm

Moisture Sensitivity Level (MSL):

1

No. of Channels:

2

No. of Functions:

1

No. of Terminals:

10

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

3 A

Nominal Output Peak Current Limit:

1 A

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOLCC10,.16,32

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Power Supplies (V):

12

Qualification:

Not Qualified

Maximum Seated Height:

.8 mm

Sub-Category:

MOSFET Drivers

Maximum Supply Current:

3 mA

Maximum Supply Voltage:

14 V

Minimum Supply Voltage:

9 V

Nominal Supply Voltage:

12 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

.8 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Turn-off Time:

.056 us

Turn-on Time:

.056 us

Width:

4 mm

Trade Compliance

LM25101CSD/NOPB Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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