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LM25101BSD/NOPB

Texas Instruments

LM25101BSD/NOPB by Texas Instruments

LM25101BSD/NOPB by Texas Instruments is a MOSFET gate driver with 2 channels, capable of driving high side with 3A output current. It operates in automotive-grade temperatures (-40 to 125°C) and has a small outline package style. Ideal for applications requiring precise turn-on/off times (0.056us) and a max supply voltage of 14V.

Median Price

$3.600

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Texas Instruments

USA . 32,588 parts In-Stock

1+ parts

$3.600

100+ parts

$3.154

1k+ parts

$1.782

10k+ parts

-

32,588

$3.600

$3.154

$1.782

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,139 parts In-Stock

1+ parts

$3.420

100+ parts

-

1k+ parts

-

10k+ parts

-

3,139

$3.420

-

-

-

Vyrian

USA . 6,130 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,130

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,118 parts In-Stock

1+ parts

$3.240

100+ parts

-

1k+ parts

-

10k+ parts

-

1,118

$3.240

-

-

-

Parana Technologies

USA . 477 parts In-Stock

1+ parts

$10.684

100+ parts

$992.213

1k+ parts

$9.616

10k+ parts

-

477

$10.684

$992.213

$9.616

-

DigiPath Technology Company

USA . 275 parts In-Stock

1+ parts

$11.765

100+ parts

$10.824

1k+ parts

-

10k+ parts

-

275

$11.765

$10.824

-

-

ChromeModa Solutions

Germany . 3,945 parts In-Stock

1+ parts

$12.005

100+ parts

$9.844

1k+ parts

-

10k+ parts

-

3,945

$12.005

$9.844

-

-

IDEA Electronic Components Group

UK . 79 parts In-Stock

1+ parts

$12.005

100+ parts

$11.405

1k+ parts

$10.804

10k+ parts

-

79

$12.005

$11.405

$10.804

-

AZTECH Wire

Italy . 277 parts In-Stock

1+ parts

$16.900

100+ parts

-

1k+ parts

-

10k+ parts

-

277

$16.900

-

-

-

Microchip USA

USA . 2,144 parts In-Stock

1+ parts

$25.670

100+ parts

$25.510

1k+ parts

$25.430

10k+ parts

$25.350

2,144

$25.670

$25.510

$25.430

$25.350

Perfect Parts

USA . 1,085 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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1,085

-

-

-

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Overview

Experience the superior quality and reliability of Texas Instruments with the LM25101BSD/NOPB MOSFET Gate Driver. This versatile component is perfect for a wide range of applications in automotive and industrial settings. With its high-side driver functionality, small outline package style, and dual terminal position, this driver offers exceptional performance and efficiency. Trust in Texas Instruments to deliver cutting-edge technology that meets your needs and exceeds your expectations. Elevate your projects with the LM25101BSD/NOPB and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides durability and protection for the internal components of the gate driver, ensuring a longer lifespan.

Surface Mount: YES

Surface mount design allows for easy and secure installation on circuit boards, saving space and improving reliability.

Maximum Supply Voltage: 14 V

With a maximum supply voltage of 14 V, this gate driver can support a wide range of applications without the risk of damaging the internal components.

Package Shape: SQUARE

The square package shape is compact and allows for efficient use of space on the circuit board.

Minimum Operating Temperature: -40 °C

The wide operating temperature range of -40 to 125°C ensures that the gate driver can function reliably in various environments.

Nominal Output Peak Current Limit: 2 A

The nominal output peak current limit of 2 A allows for efficient control of the connected MOSFETs, ensuring optimal performance and reliability.

No. of Channels: 2

Having 2 channels allows for driving multiple MOSFETs simultaneously, providing flexibility in circuit design.

Turn-on Time: 0.056 us

The fast turn-on time of 0.056 microseconds ensures quick and precise switching of the MOSFETs, reducing power losses and improving efficiency.

Temperature Grade: AUTOMOTIVE

Designed for automotive applications, this gate driver meets stringent requirements for temperature resistance and reliability in automotive environments.

Technical Specifications

MOSFET Gate Drivers LM25101BSD/NOPB attributes and parameters. Explore more MOSFET Gate Drivers devices from Texas Instruments

Specs

High Side Driver:

YES

Interface IC Type:

JESD-30 Code:

S-PDSO-N10

JESD-609 Code:

e3

Length:

4 mm

Moisture Sensitivity Level (MSL):

1

No. of Channels:

2

No. of Functions:

1

No. of Terminals:

10

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

3 A

Nominal Output Peak Current Limit:

2 A

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOLCC10,.16,32

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Power Supplies (V):

12

Qualification:

Not Qualified

Maximum Seated Height:

.8 mm

Sub-Category:

MOSFET Drivers

Maximum Supply Current:

3 mA

Maximum Supply Voltage:

14 V

Minimum Supply Voltage:

9 V

Nominal Supply Voltage:

12 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

.8 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Turn-off Time:

.056 us

Turn-on Time:

.056 us

Width:

4 mm

Trade Compliance

LM25101BSD/NOPB Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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