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LM25101ASD-1/NOPB

Texas Instruments

LM25101ASD-1/NOPB by Texas Instruments

LM25101ASD-1/NOPB by Texas Instruments is a MOSFET gate driver with 2 channels, 3A output current, and 12V nominal voltage. It operates in automotive-grade temperatures (-40 to 125°C) and has a turn-on/off time of 0.056us. Ideal for high-side driving applications requiring precise control in compact spaces.

Median Price

$3.200

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Texas Instruments

USA . 131,980 parts In-Stock

1+ parts

$3.200

100+ parts

$2.804

1k+ parts

$1.584

10k+ parts

-

131,980

$3.200

$2.804

$1.584

-

Mouser Electronics

USA . 1,014 parts In-Stock

1+ parts

$5.010

100+ parts

$3.190

1k+ parts

$2.770

10k+ parts

$2.680

1,014

$5.010

$3.190

$2.770

$2.680

Avnet

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.641

10k+ parts

$1.418

1,000

-

-

$1.641

$1.418

DigiKey

USA . 309 parts In-Stock

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309

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Distributors (In-Stock)

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Nova Conductors

Japan . 500 parts In-Stock

1+ parts

$2.376

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500

$2.376

-

-

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Digiode

USA . 997 parts In-Stock

1+ parts

$3.040

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997

$3.040

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Vyrian

USA . 33,818 parts In-Stock

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33,818

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Chip Stock

USA . 3,170 parts In-Stock

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3,170

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Distributors (Availability)

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Ampacity Inc.

Singapore . 33,745 parts In-Stock

1+ parts

$1.390

100+ parts

-

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-

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33,745

$1.390

-

-

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Continental Prestige Electronics

USA . 2,852 parts In-Stock

1+ parts

$2.376

100+ parts

-

1k+ parts

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$2.328

2,852

$2.376

-

-

$2.328

Argo Parts USA

USA . 1,437 parts In-Stock

1+ parts

$2.376

100+ parts

-

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-

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1,437

$2.376

-

-

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Bastille Electronics

Australia . 300 parts In-Stock

1+ parts

$2.376

100+ parts

$2.257

1k+ parts

$2.144

10k+ parts

$2.115

300

$2.376

$2.257

$2.144

$2.115

Corohmni

South Africa . 719 parts In-Stock

1+ parts

$2.430

100+ parts

-

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719

$2.430

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Corphita

USA . 2,296 parts In-Stock

1+ parts

$2.880

100+ parts

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2,296

$2.880

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Semicontronic

India . 33,681 parts In-Stock

1+ parts

$3.040

100+ parts

$2.964

1k+ parts

$2.949

10k+ parts

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33,681

$3.040

$2.964

$2.949

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Parana Technologies

USA . 306 parts In-Stock

1+ parts

$6.469

100+ parts

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$7.214

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306

$6.469

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$7.214

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DigiPath Technology Company

USA . 1,934 parts In-Stock

1+ parts

$7.124

100+ parts

$6.554

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1,934

$7.124

$6.554

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ChromeModa Solutions

Germany . 6,425 parts In-Stock

1+ parts

$7.269

100+ parts

$5.961

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6,425

$7.269

$5.961

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IDEA Electronic Components Group

UK . 850 parts In-Stock

1+ parts

$7.269

100+ parts

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$6.542

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850

$7.269

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$6.542

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Lixinc

USA . 15,300 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 11,375 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,468 parts In-Stock

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6,468

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Alle Elektronik GmbH

Germany . 4,312 parts In-Stock

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4,312

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Perfect Parts

USA . 1,081 parts In-Stock

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1,081

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Overview

Unlock the power of efficient and reliable MOSFET gate drivers with the LM25101ASD-1/NOPB from Texas Instruments. With a reputation for high-quality products, Texas Instruments delivers a top-of-the-line solution for your application needs. Whether you're working on automotive projects or industrial applications, this compact and versatile driver offers maximum supply voltage of 14V and a nominal output peak current limit of 3A to ensure optimal performance. Trust in Texas Instruments to provide the value and benefits you need to take your project to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material makes the package lightweight and durable, ideal for applications where weight and durability are important.

Surface Mount: YES

Surface mount capability allows for easy and convenient installation on PCBs, saving space and improving assembly efficiency.

Maximum Supply Voltage: 14 V

With a high maximum supply voltage, this gate driver can operate in a wide range of applications, providing flexibility and versatility.

Power Supplies (V): 12

The nominal supply voltage of 12V ensures compatibility with standard power sources, making integration into existing systems straightforward.

Maximum Operating Temperature: 125 °C

High maximum operating temperature allows for reliable performance in demanding environments, increasing the longevity of the product.

Terminal Finish: MATTE TIN

Matte tin finish provides excellent solderability and corrosion resistance, ensuring a reliable electrical connection over time.

High Side Driver: YES

High side driver capability allows for the efficient control of high-side MOSFETs, enabling more complex and versatile circuit designs.

Temperature Grade: AUTOMOTIVE

Automotive temperature grade indicates that this gate driver is suitable for use in automotive applications, where temperature fluctuations are common.

No. of Channels: 2

Two channels provide the ability to control multiple MOSFETs independently, offering enhanced functionality and flexibility in circuit design.

Technical Specifications

MOSFET Gate Drivers LM25101ASD-1/NOPB attributes and parameters. Explore more MOSFET Gate Drivers devices from Texas Instruments

Specs

High Side Driver:

YES

Interface IC Type:

JESD-30 Code:

S-PDSO-N8

JESD-609 Code:

e3

Length:

4 mm

Moisture Sensitivity Level (MSL):

1

No. of Channels:

2

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

3 A

Nominal Output Peak Current Limit:

3 A

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOLCC8,.16,32

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Power Supplies (V):

12

Qualification:

Not Qualified

Maximum Seated Height:

.8 mm

Sub-Category:

MOSFET Drivers

Maximum Supply Current:

3 mA

Maximum Supply Voltage:

14 V

Minimum Supply Voltage:

9 V

Nominal Supply Voltage:

12 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

.8 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Turn-off Time:

.056 us

Turn-on Time:

.056 us

Width:

4 mm

Trade Compliance

LM25101ASD-1/NOPB Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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