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LM25101BSDX/NOPB

Texas Instruments

LM25101BSDX/NOPB by Texas Instruments

LM25101BSDX/NOPB by Texas Instruments is a MOSFET gate driver with 2 channels, 3A max output current, and 12V nominal voltage. It operates in automotive-grade temperatures (-40 to 125°C) and has a small outline package style for space-constrained applications. Ideal for high side driving in automotive electronics due to its fast turn-on/off times (0.056us).

Median Price

$2.666

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Texas Instruments

USA . 45,000 parts In-Stock

1+ parts

$2.666

100+ parts

$2.336

1k+ parts

$1.320

10k+ parts

-

45,000

$2.666

$2.336

$1.320

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,982 parts In-Stock

1+ parts

$2.533

100+ parts

-

1k+ parts

-

10k+ parts

-

1,982

$2.533

-

-

-

Vyrian

USA . 5,738 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,738

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 301 parts In-Stock

1+ parts

$2.399

100+ parts

-

1k+ parts

-

10k+ parts

-

301

$2.399

-

-

-

Ampacity Inc.

Singapore . 44,929 parts In-Stock

1+ parts

$4.930

100+ parts

-

1k+ parts

-

10k+ parts

-

44,929

$4.930

-

-

-

AZTECH Wire

Italy . 582 parts In-Stock

1+ parts

$8.080

100+ parts

-

1k+ parts

-

10k+ parts

-

582

$8.080

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-

-

Parana Technologies

USA . 1,715 parts In-Stock

1+ parts

$12.804

100+ parts

-

1k+ parts

$13.269

10k+ parts

-

1,715

$12.804

-

$13.269

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DigiPath Technology Company

USA . 1,488 parts In-Stock

1+ parts

$14.099

100+ parts

$12.971

1k+ parts

-

10k+ parts

-

1,488

$14.099

$12.971

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IDEA Electronic Components Group

UK . 1,239 parts In-Stock

1+ parts

$14.387

100+ parts

$13.668

1k+ parts

$12.948

10k+ parts

-

1,239

$14.387

$13.668

$12.948

-

ChromeModa Solutions

Germany . 159 parts In-Stock

1+ parts

$14.387

100+ parts

$11.797

1k+ parts

-

10k+ parts

-

159

$14.387

$11.797

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-

Microchip USA

USA . 2,093 parts In-Stock

1+ parts

$44.800

100+ parts

$44.160

1k+ parts

$43.840

10k+ parts

$43.520

2,093

$44.800

$44.160

$43.840

$43.520

Authorized Procurement Solutions

USA . 10,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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10,000

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Overview

Enhance your electronics projects with the LM25101BSDX/NOPB MOSFET Gate Driver from Texas Instruments. Known for their top-notch quality and reliability, Texas Instruments delivers high-performance components that meet the demands of various applications. This versatile gate driver is designed to provide efficient power management and control, making it ideal for automotive and industrial settings. With a compact package style and a wide temperature range, this product offers exceptional value and benefits to customers seeking reliable and high-quality solutions for their projects. Trust Texas Instruments to deliver the performance you need for your next innovation.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components of the gate driver, ensuring long-term reliability.

Surface Mount: YES

Allows for easy and convenient installation on circuit boards, saving time and effort during assembly.

Maximum Supply Voltage: 14 V

Suitable for applications requiring a higher supply voltage, providing flexibility in design and usage scenarios.

Minimum Operating Temperature: -40 °C

Capable of functioning in extreme low-temperature environments, making it suitable for a wide range of operating conditions.

Maximum Output Current: 3 A

High output current capability allows for driving power MOSFETs efficiently, enabling the gate driver to control larger loads.

Maximum Operating Temperature: 125 °C

Withstands high operating temperatures without compromising performance, ensuring stability in demanding industrial or automotive applications.

No. of Channels: 2

Provides the capability to drive multiple MOSFETs independently, allowing for more complex circuit configurations and increased control flexibility.

Technical Specifications

MOSFET Gate Drivers LM25101BSDX/NOPB attributes and parameters. Explore more MOSFET Gate Drivers devices from Texas Instruments

Specs

High Side Driver:

YES

Interface IC Type:

JESD-30 Code:

S-PDSO-N10

JESD-609 Code:

e3

Length:

4 mm

Moisture Sensitivity Level (MSL):

1

No. of Channels:

2

No. of Functions:

1

No. of Terminals:

10

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

3 A

Nominal Output Peak Current Limit:

2 A

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOLCC10,.16,32

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Power Supplies (V):

12

Qualification:

Not Qualified

Maximum Seated Height:

.8 mm

Sub-Category:

MOSFET Drivers

Maximum Supply Current:

3 mA

Maximum Supply Voltage:

14 V

Minimum Supply Voltage:

9 V

Nominal Supply Voltage:

12 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

.8 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Turn-off Time:

.056 us

Turn-on Time:

.056 us

Width:

4 mm

Trade Compliance

LM25101BSDX/NOPB Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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