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JFE150DCKR

Texas Instruments

JFE150DCKR by Texas Instruments

JFE150DCKR by Texas Instruments is a N-CHANNEL FET with 40V DS Breakdown Voltage. Ideal for AMPLIFIER applications, it features SINGLE configuration with BUILT-IN DIODE. Operating in DEPLETION MODE, it has a max temp of 125°C and feedback capacitance of 7pF.

Median Price

$2.470

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Texas Instruments

USA . 326,898 parts In-Stock

1+ parts

$2.083

100+ parts

$1.721

1k+ parts

$0.930

10k+ parts

-

326,898

$2.083

$1.721

$0.930

-

Mouser Electronics

USA . 2,825 parts In-Stock

1+ parts

$2.470

100+ parts

-

1k+ parts

-

10k+ parts

-

2,825

$2.470

-

-

-

DigiKey

USA . 2,659 parts In-Stock

1+ parts

$2.470

100+ parts

$1.501

1k+ parts

$1.326

10k+ parts

$1.250

2,659

$2.470

$1.501

$1.326

$1.250

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 550 parts In-Stock

1+ parts

$1.389

100+ parts

-

1k+ parts

-

10k+ parts

-

550

$1.389

-

-

-

Digiode

USA . 1,426 parts In-Stock

1+ parts

$1.979

100+ parts

-

1k+ parts

-

10k+ parts

-

1,426

$1.979

-

-

-

Vyrian

USA . 111,212 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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111,212

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Bastille Electronics

Australia . 10 parts In-Stock

1+ parts

$1.389

100+ parts

$1.320

1k+ parts

$1.254

10k+ parts

$1.236

10

$1.389

$1.320

$1.254

$1.236

Parana Technologies

USA . 704 parts In-Stock

1+ parts

$1.638

100+ parts

-

1k+ parts

$2.256

10k+ parts

-

704

$1.638

-

$2.256

-

Ampacity Inc.

Singapore . 111,564 parts In-Stock

1+ parts

$1.770

100+ parts

-

1k+ parts

-

10k+ parts

-

111,564

$1.770

-

-

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DigiPath Technology Company

USA . 887 parts In-Stock

1+ parts

$1.803

100+ parts

$1.659

1k+ parts

-

10k+ parts

-

887

$1.803

$1.659

-

-

ChromeModa Solutions

Germany . 4,684 parts In-Stock

1+ parts

$1.840

100+ parts

$1.509

1k+ parts

-

10k+ parts

-

4,684

$1.840

$1.509

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IDEA Electronic Components Group

UK . 710 parts In-Stock

1+ parts

$1.840

100+ parts

-

1k+ parts

$1.656

10k+ parts

-

710

$1.840

-

$1.656

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Corphita

USA . 881 parts In-Stock

1+ parts

$1.875

100+ parts

-

1k+ parts

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881

$1.875

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-

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QUARKTWIN TECHNOLOGY LTD

USA . 26,665 parts In-Stock

1+ parts

-

100+ parts

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26,665

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Authorized Procurement Solutions

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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1,000

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Lixinc

USA . 500 parts In-Stock

1+ parts

-

100+ parts

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500

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Overview

Enhance your amplifier projects with the high-quality JFE150DCKR Small Signal Field Effect Transistor by Texas Instruments. Designed with precision and expertise, this N-CHANNEL transistor boasts a single configuration with built-in diode for seamless performance. Ideal for various amplifier applications, its surface mount capability and durable plastic/epoxy package make installation a breeze. Unlock the potential of your projects with Texas Instruments' JFE150DCKR, delivering reliability, efficiency, and unmatched value for all your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package material provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically offer higher electron mobility and better performance compared to P-channel FETs, making them a preferred choice for amplification tasks.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for easier integration into circuits and can provide added functionality for specific applications.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, this FET can deliver high gain and low noise operation for signal amplification tasks.

Surface Mount: YES

Surface-mount technology enables easy and compact mounting on circuit boards, saving space and simplifying assembly processes.

Minimum DS Breakdown Voltage: 40 V

The high minimum breakdown voltage ensures reliable operation and protects the transistor from voltage spikes or surges.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature makes this FET suitable for applications where heat dissipation is a concern or where elevated temperatures are expected.

Maximum Feedback Capacitance (Crss): 7 pF

The low feedback capacitance helps reduce the risk of signal distortion and ensures stable performance in high-frequency applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) JFE150DCKR attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Texas Instruments

Specs

Minimum DS Breakdown Voltage:

40 V

Field Effect Transistor Technology:

JUNCTION

Maximum Feedback Capacitance (Crss):

7 pF

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

5

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

JFE150DCKR Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

Category top products 20

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