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JFE150DBVR

Texas Instruments

JFE150DBVR by Texas Instruments

JFE150DBVR by Texas Instruments is a N-CHANNEL FET with 40V DS Breakdown Voltage. It is a SINGLE configuration transistor with built-in diode, ideal for AMPLIFIER applications. Operating in DEPLETION MODE, it has 5 terminals and can withstand temperatures from -40 to 125°C.

Median Price

$2.080

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 2,761 parts In-Stock

1+ parts

$2.080

100+ parts

$1.721

1k+ parts

$1.163

10k+ parts

-

2,761

$2.080

$1.721

$1.163

-

Mouser Electronics

USA . 2,069 parts In-Stock

1+ parts

$2.080

100+ parts

$1.730

1k+ parts

$1.330

10k+ parts

-

2,069

$2.080

$1.730

$1.330

-

Texas Instruments

USA . 30,032 parts In-Stock

1+ parts

$2.083

100+ parts

$1.721

1k+ parts

$0.930

10k+ parts

-

30,032

$2.083

$1.721

$0.930

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,699 parts In-Stock

1+ parts

$1.979

100+ parts

-

1k+ parts

-

10k+ parts

-

1,699

$1.979

-

-

-

Vyrian

USA . 247 parts In-Stock

1+ parts

$2.083

100+ parts

-

1k+ parts

-

10k+ parts

-

247

$2.083

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 16,603 parts In-Stock

1+ parts

$1.770

100+ parts

-

1k+ parts

-

10k+ parts

-

16,603

$1.770

-

-

-

Semicontronic

India . 16,600 parts In-Stock

1+ parts

$1.770

100+ parts

$1.726

1k+ parts

$1.717

10k+ parts

-

16,600

$1.770

$1.726

$1.717

-

Corphita

USA . 898 parts In-Stock

1+ parts

$1.875

100+ parts

-

1k+ parts

-

10k+ parts

-

898

$1.875

-

-

-

Corohmni

South Africa . 498 parts In-Stock

1+ parts

$2.083

100+ parts

-

1k+ parts

-

10k+ parts

-

498

$2.083

-

-

-

Overview

Enhance your electronics projects with the JFE150DBVR by Texas Instruments. With a reputation for quality and reliability, Texas Instruments delivers small signal field effect transistors that are perfect for amplification applications. The JFE150DBVR offers customers exceptional value and benefits, thanks to its N-channel configuration and built-in diode. Whether you're a hobbyist or a professional, this transistor is sure to elevate your projects to the next level. Experience the advantages of Texas Instruments technology today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good protection and durability for the transistor, ensuring it lasts long and performs well.

Polarity or Channel Type: N-CHANNEL

N-channel transistors typically have higher mobility and conductivity, making them efficient for many applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode helps in protecting the transistor from reverse current flow, improving its overall reliability.

Transistor Application: AMPLIFIER

Designed specifically for use in amplifiers, ensuring optimal performance in amplification circuits.

Surface Mount: YES

Easy to mount on PCBs, saving space and making the assembly process more efficient.

Minimum DS Breakdown Voltage: 40 V

With a high breakdown voltage, this transistor can handle higher voltages without damage, making it versatile for different voltage requirements.

Maximum Operating Temperature: 125 °C

Can operate in high temperature environments without performance degradation, suitable for various applications.

Minimum Operating Temperature: -40 °C

Capable of functioning in low temperature conditions, offering flexibility in usage environments.

Technical Specifications

Small Signal Field Effect Transistors (FET) JFE150DBVR attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Texas Instruments

Specs

Minimum DS Breakdown Voltage:

40 V

Field Effect Transistor Technology:

JUNCTION

Maximum Feedback Capacitance (Crss):

7 pF

JESD-30 Code:

R-PDSO-G5

No. of Elements:

1

No. of Terminals:

5

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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