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HD3SS213ZQER

Texas Instruments

HD3SS213ZQER by Texas Instruments

HD3SS213ZQER by Texas Instruments is a 4-channel differential multiplexer with a nominal voltage of 3.3V and max operating temperature of 105°C. It features a grid array package style, very thin profile, and fine pitch terminals, making it suitable for industrial applications requiring common output and low supply current of 5mA.

Median Price

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Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

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Vyrian

USA . 3,410 parts In-Stock

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Sensible Micro Corp

USA . 2,497 parts In-Stock

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SPM Sales

USA . 2,375 parts In-Stock

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Digiode

USA . 1,284 parts In-Stock

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 350 parts In-Stock

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350

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Chip Stock

USA . 305 parts In-Stock

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One Stop Electronics

USA . 187 parts In-Stock

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$0.500

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Northwest PG Solutions

USA . 2,067 parts In-Stock

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$2.608

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AZTECH Wire

Italy . 783 parts In-Stock

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$15.877

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Parana Technologies

USA . 341 parts In-Stock

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$21.958

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DigiPath Technology Company

USA . 125 parts In-Stock

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$24.179

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$22.244

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ChromeModa Solutions

Germany . 3,394 parts In-Stock

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$24.672

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IDEA Electronic Components Group

UK . 2,269 parts In-Stock

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Lixinc

USA . 17,318 parts In-Stock

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Kepictronics

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Corphita

USA . 1,476 parts In-Stock

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Authorized Procurement Solutions

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GreenTree Electronics

Israel . 1,004 parts In-Stock

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Assy Fe

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Native Components

USA . 757 parts In-Stock

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Microchip USA

USA . 157 parts In-Stock

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Overview

Experience seamless signal switching with the Texas Instruments HD3SS213ZQER! Crafted with precision and quality, this differential multiplexer offers unmatched performance in a compact package. Ideal for industrial applications, this versatile device ensures reliable operation even in extreme temperatures. Say goodbye to signal interference and hello to enhanced productivity with the HD3SS213ZQER. Upgrade your systems today and enjoy the benefits of Texas Instruments' cutting-edge technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material provides durability and reliability to the product, making it suitable for various applications.

Surface Mount: YES

Being surface mountable allows for easy and efficient installation on circuit boards, saving space and improving overall system integration.

Nominal Supply Voltage (Vsup): 3.3 V

The 3.3V supply voltage is common in many electronic devices, ensuring compatibility with a wide range of systems.

Maximum Operating Temperature: 105 °C

With a high maximum operating temperature, this product can withstand extreme conditions and maintain functionality under tough environments.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature ensures that the product can operate reliably even in cold temperatures, expanding its usability.

Maximum Seated Height: 1 mm

The slim profile of the product with a maximum seated height of 1mm allows for compact designs and efficient use of space in applications with limited room.

No. of Channels: 4

With 4 channels, this product offers versatility in routing signals or data, making it suitable for applications that require multiple inputs or outputs.

Technical Specifications

Multiplexers & Switches HD3SS213ZQER attributes and parameters. Explore more Multiplexers & Switches devices from Texas Instruments

Specs

Other IC type:

JESD-30 Code:

S-PBGA-B50

JESD-609 Code:

e1

Length:

5 mm

Moisture Sensitivity Level (MSL):

3

Normal Position (V):

NO

No. of Channels:

4

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Output (V):

COMMON OUTPUT

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Peak Reflow Temperature (C):

260

Maximum Seated Height:

1 mm

Maximum Supply Current (Isup):

5 mA

Nominal Supply Voltage (Vsup):

3.3 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

.5 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width (mm):

5 mm

Trade Compliance

HD3SS213ZQER Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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