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DS100BR111ASQE

Texas Instruments

DS100BR111ASQE by Texas Instruments

DS100BR111ASQE by Texas Instruments is a 24-terminal telecom IC with a nominal voltage of 2.5V. It operates in industrial temperature range (-40 to 85°C) and features a square package style (4x4mm). Ideal for telecom circuits, it is surface mountable and has a terminal pitch of 0.5mm.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,764 parts In-Stock

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Digiode

USA . 2,664 parts In-Stock

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Distributors (Availability)

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Native Components

USA . 467 parts In-Stock

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$2.020

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467

$2.020

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Northwest PG Solutions

USA . 2,152 parts In-Stock

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$2.222

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$2.222

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AZTECH Wire

Italy . 789 parts In-Stock

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$9.396

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789

$9.396

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Parana Technologies

USA . 99 parts In-Stock

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$11.270

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$11.703

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99

$11.270

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$11.703

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ChromeModa Solutions

Germany . 6,273 parts In-Stock

1+ parts

$12.663

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$10.384

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6,273

$12.663

$10.384

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IDEA Electronic Components Group

UK . 1,042 parts In-Stock

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$12.663

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$12.030

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$11.397

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1,042

$12.663

$12.030

$11.397

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One Stop Electronics

USA . 505 parts In-Stock

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$24.000

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505

$24.000

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Ampacity Inc.

Singapore . 1,200 parts In-Stock

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$191.000

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$191.000

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Semicontronic

India . 141 parts In-Stock

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$746.000

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$727.350

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$723.620

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141

$746.000

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$723.620

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Corphita

USA . 2,865 parts In-Stock

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Corohmni

South Africa . 402 parts In-Stock

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DigiPath Technology Company

USA . 396 parts In-Stock

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$11.417

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396

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$11.417

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Overview

Enhance your telecommunications systems with the high-quality DS100BR111ASQE by Texas Instruments. Known for their top-notch manufacturing, Texas Instruments delivers reliable telecom interface ICs that meet the demands of various applications. This square-shaped surface mount chip carrier boasts 24 terminals and a very thin profile, making it ideal for industrial settings. With a nominal supply voltage of 2.5V, this telecom circuit offers unparalleled value and performance. Upgrade your communication infrastructure today with the DS100BR111ASQE.

Feature Benefit Bullets

Surface Mount: YES

The surface mount feature allows for easy assembly and installation in various telecom devices, making it suitable for mass production.

Package Shape: SQUARE

The square package shape provides stability and efficient use of board space in telecom devices, increasing overall reliability.

No. of Terminals: 24

Having 24 terminals allows for multiple connections and functions within the telecom interface IC, making it versatile and expandable for different applications.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature ensures that the IC can perform reliably even under demanding conditions, making it suitable for industrial use.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature range allows the IC to function in extreme cold environments without compromising performance.

Nominal Supply Voltage: 2.5 V

The 2.5V supply voltage is commonly used in many telecom applications, ensuring compatibility and efficient power consumption.

Technical Specifications

Other Function Telecom Interface ICs DS100BR111ASQE attributes and parameters. Explore more Other Function Telecom Interface ICs devices from Texas Instruments

Specs

JESD-30 Code:

S-XQCC-N24

Length:

4 mm

No. of Functions:

1

No. of Terminals:

24

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

UNSPECIFIED

Package Code:

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Maximum Seated Height:

.8 mm

Nominal Supply Voltage:

2.5 V

Surface Mount:

YES

Telecom IC Type:

Temperature Grade:

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Width:

4 mm

Trade Compliance

DS100BR111ASQE Telecommunications trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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