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DRV8808DCAR

Texas Instruments

DRV8808DCAR by Texas Instruments

DRV8808DCAR by Texas Instruments is a Motion Control IC with 48 terminals and a supply voltage range of 18-38V. It features a max output current of 6.8A, operating temperature range of -40 to 85°C, and is ideal for Brushless DC Motor control applications.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 3,970 parts In-Stock

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Vyrian

USA . 3,251 parts In-Stock

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One Stop Electronics

USA . 1,367 parts In-Stock

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$0.500

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$0.500

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Semicontronic

India . 246 parts In-Stock

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$1.500

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$1.462

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$1.455

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246

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$1.455

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Ampacity Inc.

Singapore . 451 parts In-Stock

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$3.500

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451

$3.500

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Parana Technologies

USA . 1,991 parts In-Stock

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$10.651

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$11.142

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$10.651

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$11.142

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DigiPath Technology Company

USA . 1,154 parts In-Stock

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$11.728

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$11.728

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ChromeModa Solutions

Germany . 2,342 parts In-Stock

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$11.967

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$9.813

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$11.967

$9.813

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IDEA Electronic Components Group

UK . 2,161 parts In-Stock

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$11.967

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$11.369

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$10.770

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$10.770

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AZTECH Wire

Italy . 262 parts In-Stock

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$16.206

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262

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Microchip USA

USA . 3,384 parts In-Stock

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$30.240

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$29.810

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$29.590

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$29.380

3,384

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$29.380

Perfect Parts

USA . 2,648 parts In-Stock

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Corphita

USA . 2,475 parts In-Stock

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Northwest PG Solutions

USA . 686 parts In-Stock

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Corohmni

South Africa . 186 parts In-Stock

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Native Components

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Overview

Experience unmatched precision and reliability with the Texas Instruments DRV8808DCAR, a top-of-the-line Motion Control IC that sets the standard for quality in the industry. With a robust construction and advanced features, this product is ideal for a wide range of applications, from robotics to industrial automation. Trust in Texas Instruments' reputation for excellence and innovation to deliver superior performance and efficiency. Upgrade your systems today and unlock a world of possibilities with the DRV8808DCAR.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material is cost-effective, lightweight, and provides good electrical insulation, making the product durable and reliable.

Nominal Supply Voltage (Vsup): 27 V

The product operates at a suitable voltage level for efficient performance without the risk of overloading or underfeeding, providing stable and consistent output.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, the product can withstand harsh environments and extended use without overheating or malfunctioning.

Terminal Finish: NICKEL PALLADIUM GOLD

The use of nickel palladium gold terminal finish ensures good conductivity, corrosion resistance, and solderability, contributing to the product's longevity and performance.

Maximum Output Current: 6.8 A

With a high maximum output current, the product can handle heavy loads and provide sufficient power for various applications, making it versatile and suitable for demanding tasks.

Technical Specifications

Motion Control ICs DRV8808DCAR attributes and parameters. Explore more Motion Control ICs devices from Texas Instruments

Specs

JESD-30 Code:

R-PDSO-G48

JESD-609 Code:

e4

Length:

12.5 mm

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

48

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

6.8 A

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Maximum Supply Voltage (Vsup):

38 V

Minimum Supply Voltage (Vsup):

18 V

Nominal Supply Voltage (Vsup):

27 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width (mm):

6.1 mm

Trade Compliance

DRV8808DCAR Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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