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DP83848LFQSQ

Texas Instruments

DP83848LFQSQ by Texas Instruments

DP83848LFQSQ by Texas Instruments is a 40-terminal Ethernet transceiver with data rate of 100000 Mbps. Operating temperature ranges from -40 to 105 °C, suitable for industrial applications. It features CMOS technology, no-lead terminal form, and AEC-Q100 screening level.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 8,344 parts In-Stock

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Digiode

USA . 3,035 parts In-Stock

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Distributors (Availability)

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Native Components

USA . 226 parts In-Stock

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$5.210

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226

$5.210

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Parana Technologies

USA . 2,269 parts In-Stock

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$15.544

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$15.918

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$15.544

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$15.918

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ChromeModa Solutions

Germany . 4,130 parts In-Stock

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$17.465

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$14.321

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$17.465

$14.321

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IDEA Electronic Components Group

UK . 2,104 parts In-Stock

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$17.465

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$16.592

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$15.718

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2,104

$17.465

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$15.718

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AZTECH Wire

Italy . 439 parts In-Stock

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$18.140

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439

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One Stop Electronics

USA . 1,167 parts In-Stock

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$75.000

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Lixinc

USA . 13,857 parts In-Stock

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Microchip USA

USA . 2,782 parts In-Stock

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DigiPath Technology Company

USA . 1,484 parts In-Stock

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$15.746

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Northwest PG Solutions

USA . 1,371 parts In-Stock

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Corphita

USA . 1,110 parts In-Stock

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Overview

Experience seamless connectivity and reliable performance with the Texas Instruments DP83848LFQSQ Ethernet transceiver. As a leader in network interfaces, Texas Instruments ensures top-notch quality and cutting-edge technology in every product. Ideal for industrial applications, this chip carrier offers a wide temperature range and robust construction for long-lasting durability. Trust in Texas Instruments to deliver innovative solutions that meet your networking needs effortlessly. Elevate your connectivity with the DP83848LFQSQ and experience the difference today!

Feature Benefit Bullets

Surface Mount: YES

Allows for easy and efficient installation on circuit boards, saving time and space in the overall design.

Screening Level: AEC-Q100

Ensures high reliability and performance standards, making it suitable for automotive applications where ruggedness is required.

Package Shape: SQUARE

Square shape provides stability and ease of mounting, making it suitable for various electronic devices.

No. of Terminals: 40

Sufficient number of terminals for connecting to other components and systems, offering versatility in usage.

Package Style (Meter): CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Multiple package styles provide options for different assembly methods and space constraints in various applications.

Maximum Operating Temperature: 105 °C

High maximum operating temperature allows for reliable performance even in demanding operating conditions.

Minimum Operating Temperature: -40 °C

Wide operating temperature range ensures functionality in extreme cold environments.

Terminal Finish: NICKEL PALLADIUM GOLD

High-quality terminal finish provides good conductivity and corrosion resistance for long-term reliability.

Terminal Position: QUAD

Quad terminal position allows for secure and stable connections, reducing the risk of disconnections.

Maximum Seated Height: 1 mm

Low profile design saves space and allows for compact packaging in electronic devices.

Width: 6 mm

Optimal width for efficient integration and compatibility with standard electronic layouts.

Maximum Time At Peak Reflow Temperature (s): 30

Short reflow time helps prevent damage to the product during soldering, ensuring reliability in manufacturing.

Peak Reflow Temperature °C: 260

High reflow temperature capability allows for proper soldering of the component to the circuit board.

Length: 6 mm

Compact length for space-saving installation and versatility in various electronic applications.

Temperature Grade: INDUSTRIAL

Industrial-grade temperature tolerance suitable for harsh operating environments with varying temperature conditions.

Technology: CMOS

CMOS technology ensures low power consumption and high-speed performance, making the product energy-efficient.

Terminal Form: NO LEAD

Lead-free terminal form complies with environmental regulations and reduces the risk of harmful substances in electronics.

Telecom IC Type: ETHERNET TRANSCEIVER

Specifically designed for Ethernet communication, ensuring compatibility and efficient data transfer in networking applications.

Nominal Supply Voltage: 3.3 V

Standard supply voltage for compatibility with common power sources and electronic systems.

Terminal Pitch: 0.5 mm

Fine terminal pitch allows for compact design and precise connections in space-limited applications.

Data Rate: 100000 Mbps

High data rate capability for fast and reliable data transmission, ideal for high-speed networking requirements.

Moisture Sensitivity Level (MSL): 3

MSL level 3 indicates moderate sensitivity to moisture, suitable for standard manufacturing and storage conditions.

Technical Specifications

Network Interfaces DP83848LFQSQ attributes and parameters. Explore more Network Interfaces devices from Texas Instruments

Specs

Data Rate:

100000 Mbps

JESD-30 Code:

S-XQCC-N40

JESD-609 Code:

e4

Length:

6 mm

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

40

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

UNSPECIFIED

Package Code:

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Screening Level:

AEC-Q100

Maximum Seated Height:

1 mm

Nominal Supply Voltage:

3.3 V

Surface Mount:

YES

Technology:

CMOS

Telecom IC Type:

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

6 mm

Trade Compliance

DP83848LFQSQ Telecommunications trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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